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IRFHM4226TRPBF Dataheets PDF



Part Number IRFHM4226TRPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFHM4226TRPBF DatasheetIRFHM4226TRPBF Datasheet (PDF)

VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 2.4 3.3 16 60 V m nC A   Applications Control or Synchronous MOSFET for high frequency buck converters FastIRFET™ IRFHM4226TRPbF HEXFET® Power MOSFET   PQFN 3.3 x 3.3 mm Features Low RDSon (<2.4m) Low Charge (typical 16nC) Low Thermal Resistance to PCB (<3.2°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1 Ben.

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VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 2.4 3.3 16 60 V m nC A   Applications Control or Synchronous MOSFET for high frequency buck converters FastIRFET™ IRFHM4226TRPbF HEXFET® Power MOSFET   PQFN 3.3 x 3.3 mm Features Low RDSon (<2.4m) Low Charge (typical 16nC) Low Thermal Resistance to PCB (<3.2°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1 Benefits Lower Conduction Losses Low Switching Losses Enable better thermal dissipation results in Increased Power Density  Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFHM4226TRPbF Package Type   PQFN 3.3mm x 3.3mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM4226TRPbF Absolute Maximum Ratings VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current  Power Dissipation  Power Dissipation  Linear Derating Factor  Operating Junction and Storage Temperature Range   Max. ± 20 28 105 67 60 420 2.7 39 0.021 -55 to + 150   Units V A    W W/°C °C Notes  through  are on page 9 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 9, 2014   IRFHM4226TRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Min. 25 ––– ––– ––– 1.1 ––– ––– ––– ––– 136 ––– ––– ––– ––– ––– ––– ––– ––– ––– –––   Typ. ––– 21 1.7 2.6 1.6 -5.7 ––– ––– ––– ––– 32 16 3.6 2.0 5.8 4.6 7.8 15 1.1 11      Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– mV/°C Reference to 25°C, ID = 1mA 2.4 3.3 m VGS = 10V, ID = 30A  VGS = 4.5V, ID = 30A  2.1 V VDS = VGS, ID = 50µA ––– mV/°C 1.0 100 -100 ––– ––– 24 µA VDS = 20V, VGS = 0V nA VGS = 20V VGS = -20V S VDS = 10V, ID = 30A nC VGS = 10V, VDS = 13V, ID = 30A –––   ––– nC –––   –––   –––   VDS = 13V VGS = 4.5V ID = 30A ––– nC VDS = 16V, VGS = 0V –––   ––– VDD = 13V, VGS = 4.5V tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Cap.


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