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VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 2.4 3.3 16
60
V m nC A
Applications Control or Synchronous MOSFET for high frequency buck converters
FastIRFET™ IRFHM4226TRPbF
HEXFET® Power MOSFET
PQFN 3.3 x 3.3 mm
Features Low RDSon (<2.4m) Low Charge (typical 16nC) Low Thermal Resistance to PCB (<3.2°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1
Benefits Lower Conduction Losses Low Switching Losses Enable better thermal dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number IRFHM4226TRPbF
Package Type PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRFHM4226TRPbF
Absolute Maximum Ratings
VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C
IDM PD @TA = 25°C PD @TC(Bottom) = 25°C
TJ TSTG
Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Max. ± 20 28 105 67
60
420 2.7 39
0.021 -55 to + 150
Units V
A
W
W/°C °C
Notes through are on page 9 1 www.irf.com © 2014 International Rectifier
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December 9, 2014
IRFHM4226TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) VGS(th) IDSS IGSS
gfs Qg Qg
Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on)
Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time
Min. 25 ––– ––– ––– 1.1 ––– ––– ––– ––– 136 ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 21 1.7 2.6 1.6 -5.7 ––– ––– ––– ––– 32 16 3.6 2.0 5.8 4.6 7.8 15 1.1 11
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
2.4 3.3
m
VGS = 10V, ID = 30A VGS = 4.5V, ID = 30A
2.1 V VDS = VGS, ID = 50µA
––– mV/°C
1.0 100 -100 ––– ––– 24
µA VDS = 20V, VGS = 0V
nA
VGS = 20V VGS = -20V
S VDS = 10V, ID = 30A
nC VGS = 10V, VDS = 13V, ID = 30A
––– ––– nC
––– ––– –––
VDS = 13V VGS = 4.5V ID = 30A
––– nC VDS = 16V, VGS = 0V ––– ––– VDD = 13V, VGS = 4.5V
tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Cap.