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IRFHM4231TRPBF

International Rectifier

Power MOSFET

VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 3.4 4.6 9.7 40 V m nC A A...


International Rectifier

IRFHM4231TRPBF

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VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 3.4 4.6 9.7 40 V m nC A Applications Control MOSFET for synchronous buck converter   FastIRFET™ IRFHM4231TRPbF HEXFET® Power MOSFET   PQFN 3.3 x 3.3 mm Features Low Charge (typical 9.7nC) Low RDSon (<3.4m) Low Thermal Resistance to PCB (<4.3°C/W) Low Profile (<0.9mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Benefits Low Switching Losses Lower Conduction Losses Enable better Thermal Dissipation results in Increased Power Density  Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFHM4231PbF Package Type   PQFN 3.3mm x 3.3mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM4231TRPbF Absolute Maximum Ratings VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current  Power Dissipation  Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range   Max. ± 20 22 72 46 40 288 2.7 29 0.021 -55 to + 150   Units V A W W/°C °C Notes  through  are on pag...




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