Power MOSFET
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 3.4 4.6 9.7
40
V m nC A
A...
Description
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 3.4 4.6 9.7
40
V m nC A
Applications Control MOSFET for synchronous buck converter
FastIRFET™ IRFHM4231TRPbF
HEXFET® Power MOSFET
PQFN 3.3 x 3.3 mm
Features Low Charge (typical 9.7nC) Low RDSon (<3.4m) Low Thermal Resistance to PCB (<4.3°C/W) Low Profile (<0.9mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification
Benefits Low Switching Losses Lower Conduction Losses Enable better Thermal Dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number
IRFHM4231PbF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRFHM4231TRPbF
Absolute Maximum Ratings
VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C
ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C
TJ TSTG
Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Max. ± 20 22 72 46
40
288 2.7 29 0.021 -55 to + 150
Units V
A
W W/°C
°C
Notes through are on pag...
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