DatasheetsPDF.com

IRFHM7194TRPBF Dataheets PDF



Part Number IRFHM7194TRPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFHM7194TRPBF DatasheetIRFHM7194TRPBF Datasheet (PDF)

VDSS RDS(on) max (@ VGS = 10V) Qg (typical) Rg (typical) ID (@TC (Bottom) = 25°C) 100 16.4 13 2.0 34 V m nC  A   Applications  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Secondary Side Synchronous Rectifier FastIRFET™ IRFHM7194TRPbF HEXFET® Power MOSFET   PQFN 3.3 x 3.3 mm Features Low RDSon (<16.4m) Low Charge (typical 13nC) Low Thermal Resistance to PCB (<3.4°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount T.

  IRFHM7194TRPBF   IRFHM7194TRPBF



Document
VDSS RDS(on) max (@ VGS = 10V) Qg (typical) Rg (typical) ID (@TC (Bottom) = 25°C) 100 16.4 13 2.0 34 V m nC  A   Applications  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Secondary Side Synchronous Rectifier FastIRFET™ IRFHM7194TRPbF HEXFET® Power MOSFET   PQFN 3.3 x 3.3 mm Features Low RDSon (<16.4m) Low Charge (typical 13nC) Low Thermal Resistance to PCB (<3.4°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Benefits Lower Conduction Losses Low Switching Losses Enable better thermal dissipation results in Increased Power Density  Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFHM7194TRPbF Package Type   PQFN 3.3mm x 3.3mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM7194TRPbF Absolute Maximum Ratings VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation  Power Dissipation  Linear Derating Factor  Operating Junction and Storage Temperature Range   Max. ± 20 9.3 34 21 95 2.8 37 0.022 -55 to + 150   Units V A  W W/°C °C Notes  through  are on page 8 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015   IRFHM7194TRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS BVDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 100 ––– ––– 2.0 ––– ––– ––– ––– 45 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––   Typ. ––– 48 13.7 –– -5.5 ––– ––– ––– ––– 13 1.8 0.9 4.3 6.0 5.2 40 2.1 2.7 3.3 8.0 2.5 733 374 11      Max. Units Conditions ––– ––– 16.4 3.6 ––– V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 20A  V VDS = VGS, ID = 50µA mV/°C 1.0 100 -100 ––– 19 µA VDS = 80V, VGS = 0V nA VGS = 20V VGS = -20V S VDS = 25V, ID = 20A ––– VDS = 50V ––– ––– nC   VGS = 10V ID = 20A ––– ––– ––– nC VDS = 50V, VGS = 0V –––   ––– VDD = 50V, VGS = 10V ––– ––– ns   ID = 20A RG= 1.0 ––– ––– VGS = 0V ––– pF   VDS = 50V ––– ƒ = 1.0MHz Avalanche Characteristics Parameter EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current    Typ. ––– –––   Max. 220 12   Units mJ A Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min. ––– ––– ––– ––– –––   Typ. ––– ––– 0.8 30 26    Max. Units 34 A 95 1.3 V 45 ns 39 nC   Conditions MOSFET symbol D showing the integral reverse G p-n junction diode. S TJ = 25°C, IS = 20A, VGS = 0V  TJ = 25°C, IF = 20A, VDD = 50V di/dt = 100A/µs  Thermal Resistance Parameter RJC (Bottom) RJC (Top) RJA RJA (<10s) Junction-to-Case  Junction-to-Case  Junction-to-Ambient  Junction-to-Ambient    Typ. ––– ––– ––– –––   Max. 3.4 35 45 29   Units °C/W 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)   1000 100 TOP BOTTOM VGS 15V 10V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 10 4.5V IRFHM7194TRPbF 1000 100 TOP BOTTOM VGS 15V 10V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 10 4.5V 1 0.1 60µs PULSE WIDTH Tj = 25°C 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 1. Typical Output Characteristics 1000 100 1 0.1 60µs PULSE WIDTH Tj = 150°C 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics 2.0 ID = 20A 1.7 VGS = 10V RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 TJ = 150°C 1 TJ = 25°C 0.1 1 VDS = 50V 60µs PULSE WIDTH 2345 VGS, Gate-to-Source Voltage (V) 6 1.4 1.1 0.8 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics 100000 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Fig 4. Normalized On-Resistance vs. Temperature 14 ID= 20A 12 10 VDS= 80V VDS= 50V VDS= 20V VGS.


IRFHM4234TRPBF IRFHM7194TRPBF IRFHM792PBF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)