Document
VDSS RDS(on) max (@ VGS = 10V) Qg (typical)
Rg (typical)
ID (@TC (Bottom) = 25°C)
100 16.4 13 2.0
34
V m nC
A
Applications Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies Secondary Side Synchronous Rectifier
FastIRFET™ IRFHM7194TRPbF
HEXFET® Power MOSFET
PQFN 3.3 x 3.3 mm
Features Low RDSon (<16.4m) Low Charge (typical 13nC) Low Thermal Resistance to PCB (<3.4°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification
Benefits Lower Conduction Losses Low Switching Losses Enable better thermal dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number
IRFHM7194TRPbF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRFHM7194TRPbF
Absolute Maximum Ratings
VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C
TJ TSTG
Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Max. ± 20 9.3 34 21 95 2.8 37 0.022 -55 to + 150
Units V
A
W W/°C
°C
Notes through are on page 8
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IRFHM7194TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
BVDSS/TJ RDS(on) VGS(th)
VGS(th) IDSS IGSS
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Qgs1 Qgs2 Qgd Qgodr
Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss
Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 100 ––– ––– 2.0 ––– ––– ––– ––– 45 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 48 13.7 –– -5.5 ––– ––– ––– ––– 13 1.8 0.9 4.3 6.0 5.2 40 2.1 2.7 3.3 8.0 2.5 733 374 11
Max. Units
Conditions
––– ––– 16.4 3.6 –––
V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA
m VGS = 10V, ID = 20A V VDS = VGS, ID = 50µA mV/°C
1.0 100 -100 ––– 19
µA VDS = 80V, VGS = 0V
nA
VGS = 20V VGS = -20V
S VDS = 25V, ID = 20A
––– VDS = 50V
––– –––
nC
VGS = 10V ID = 20A
–––
–––
––– nC VDS = 50V, VGS = 0V
–––
––– VDD = 50V, VGS = 10V
––– –––
ns
ID = 20A RG= 1.0
–––
––– VGS = 0V ––– pF VDS = 50V ––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS (Thermally limited)
Single Pulse Avalanche Energy
IAR Avalanche Current
Typ. –––
–––
Max. 220
12
Units mJ
A
Diode Characteristics Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time Qrr Reverse Recovery Charge
Min. –––
––– ––– ––– –––
Typ.
–––
–––
0.8 30 26
Max. Units
34 A
95
1.3 V 45 ns 39 nC
Conditions
MOSFET symbol
D
showing the integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 20A, VGS = 0V
TJ = 25°C, IF = 20A, VDD = 50V di/dt = 100A/µs
Thermal Resistance
Parameter
RJC (Bottom) RJC (Top) RJA RJA (<10s)
Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient
Typ. ––– ––– ––– –––
Max. 3.4 35 45 29
Units
°C/W
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ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000 100
TOP BOTTOM
VGS 15V 10V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V
10 4.5V
IRFHM7194TRPbF
1000 100
TOP BOTTOM
VGS 15V 10V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V
10
4.5V
1 0.1
60µs PULSE WIDTH Tj = 25°C
1 10 VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
1 0.1
60µs PULSE WIDTH Tj = 150°C
1 10 VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.0
ID = 20A 1.7 VGS = 10V
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
10
TJ = 150°C 1
TJ = 25°C
0.1 1
VDS = 50V 60µs PULSE WIDTH
2345 VGS, Gate-to-Source Voltage (V)
6
1.4
1.1
0.8
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
100000 10000
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd
Coss = Cds + Cgd
Fig 4. Normalized On-Resistance vs. Temperature
14 ID= 20A
12
10
VDS= 80V VDS= 50V VDS= 20V
VGS.