IRFI4410ZPBF

PD - 97475A IRFI4410ZPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits VDSS RDS(on) ID typ. max. Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G D S HEXFET® Power MOSFET 100V 7.9m: 9.3m: 43A D S D G TO-220AB Full-Pak G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor VGS EAS (Thermally limited) TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy d Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC Junction-to-Case f RθJA Junction-to-Ambient f Max. 43 30 170 47 0.3 ±30 310 -55 to + 175 300 10lbxin (1.1Nxm) Typ. ––– ––– Max. 3.2 65 Units A W W/°C V mJ °C Units °C/W www.irf.com 1 4/19/11 IRFI4410ZPbF Static @ TJ = 25°C (unless otherwise specified) Symbol Param eter Mi n. V( BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient RDS( on) Static Drain-to-Source On-Resistance VG S(th) Gate Threshold Voltage IDSS Drain-to-Sour...