PBHV2160Z

SOT223 PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 24 June 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability High collector current gain hFE at high IC 3. Applications Electronic ballast for fluorecent lighting LED driver for LED chain module LCD backlighting HID front lighting Hook switch for wired telecom Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Symbol VCEO IC Quick reference data Parameter collector-emitter voltage collector current Conditions open base Min Typ Max Unit - - 600 V - - 0.1 A Scan or click this QR code to view the latest information for this product NXP Semiconductors PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector Simplified outline 4 123 SC-73 (SOT223) Graphic symbol 2, 4 1 3 sym016 6. Ordering information Table 3. Ordering information Type number Package Name PBHV2160Z SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 7. Marking Table 4. Marking codes Type number PBHV2160Z Marking code HV216Z...