TVS Diode
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES 50 Watts peak pulse power (tp=8/2...
Description
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES 50 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 5A(tp=8/20 s) Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line. Low clamping voltage. Low leakage current.
APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Pulse Power (tp=8/20 s) Junction Temperature Storage Temperature
PPK Tj Tstg
RATING 50
-55 150 -55 150
UNIT W
PG03FBESC
TVS Diode for ESD Protection in Portable Electronics
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current
VRWM VBR IR
Junction Capacitance
CJ
TEST CONDITION -
It=1mA VRWM=3.3V VR=0V, f=1MHz
MIN. 4.2 -
TYP. -
MAX. 3.3 6.2 20 80
UNIT V V A pF
2006. 11. 8
Revision No : 3
1/2
PG03FBESC
2006. 11. 8
Revision No : 3
2/2
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