PG03FSESC

SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES 50 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 5A(tp=8/20 s) Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. (* Multi-Layer Varistors [0402 Size]) Protects on I/O or power line. Low clamping voltage. Low leakage current. APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Peak Pulse Power (tp=8/20 s) Peak Pulse Current (tp=8/20 s) Operating Temperature Storage Temperature PPK IPP Tj Tstg RATING 50 5 -55 150 -55 150 UNIT W A CATHODE MARK B A PG03FSESC Single Line TVS Diode for ESD Protection in Portable Electronics C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C D E F MILLIMETERS 1.60+_ 0.10 1.20+_ 0.10 0.80+_ 0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 ESC Marking CATHODE MARK 21 3S 21 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage VRWM VBR IR VC Junction Capacitance CJ TEST CONDITION - It=1mA VRWM=3.3V IPP=5A, tp=8/20 s VR=0V, f=1MHz MIN. 4.0 - TYP. - MAX. 3.3 20 10.9 100 UNIT...