PG03GXTE6

SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES 150 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact). Protects five I/O lines. Low clamping voltage. Low operating and leakage current. Small package for use in portable electronics. APPLICATIONS Cell phone handsets and accessories. Cordless phones. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Set-Top Box, DVD Player. Digital Camera. H A A1 CC PG03GXTE6 TVS Diode Array for ESD Protection in Portable Electronics B B1 1 6 DIM MILLIMETERS A 1.6+_ 0.05 A1 1.0 +_ 0.05 2 5 B 1.6+_ 0.05 B1 1.2 +_ 0.05 3 4 C 0.50 D 0.2+_ 0.05 H 0.5+_ 0.05 J 0.12+_ 0.05 PP P5 1. D1 2. COMMON ANODE 3. D2 4. D3 5. D4 6. D5 TES6 JD MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Peak Pulse Current (tp=8/20 s) Operating Temperature Storage Temperature SYMBOL PPK IPP Tj Tstg RATING 150 15 -55 150 -55 150 UNIT W A Marking 65 4 Type Name 3X 12 65 D5 D4 3 4 D3 D1 D2 123 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage VRWM VBR IR VC Junction Capacitance CJ TEST CONDITION It=1mA VRWM=3.3V IPP=15A, tp=8/20 s VR=0V, f=1MHz Between I/O Pins and GND MIN. 4.2 - TYP. - MAX. 3.3 30 10.9 UNIT V V A - - 120 pF 2008. 9. 10 Revision No : 2 1/2 PEAK PULSE POWER...