Document
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES Transient voltage protection for data lines. IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact). Small package for portable electronics. Suitable replacement for Varistors in ESD protection applications. Protects one I/O or power line. Low clamping voltage. Low leakage current.
APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA s). Notebooks, desktops, & servers. Portable instrument Pagers peripherals.
CATHODE MARK B A
GG
PG05BSESC
TVS Diode for ESD Protection in Portable Electronics
C 1
2 D
1. ANODE 2. CATHODE
E
F
DIM A B C D E F G
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10
ESC
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Pulse Power (tp=8/20 ) Peak Pulse Current (tp=8/20 ) Junction Temperature Storage Temperature
PPK IPP Tj Tstg
RATING 30 1.6 150
-55 150
UNIT W A
Marking
Type Name
D2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current
VRWM VBR IR
Claming Voltage
VC
Series Resistance Junction Capacitance
RS CJ
TEST CONDITION -
It=5mA VRWM=3.5V IPP=1A, tp=8/20 IPP=1.6A, tp=8/20 VR=1V, f=900MHz VR=0V, f=1MHz
MIN. -
6.65 -
TYP. -
MAX. 5
7.45 0.5 12 18 60 5.0
UNIT V V A V V
pF
2014. 3. 31
Revision No : 2
1/2
PEAK PULSE POWER PPP (W)
PG05BSESC
NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME
1K
100
10 1 10 100
PULSE DURATION tP (µs)
110 100 90 80 70 60 50 40 30 20 10
0 0
PULSE WAVEFORM
Waveform Parameters : tr=8µs td=20µs e -t
td=lpp/2
5 10 15 20 25 30
TIME (µs)
CAPACITANCE CJ (pF)
RATED POWER OR IPP (%)
POWER DERATION CURVE
110 100 90 80 70 60 50 40 30 20 10
0 0
Peak Pulse Power 8/20us
Average Power 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
CJ - VR
4
3
2
1
0 0 1234
REVERSE VOLTAGE VR (V)
5
PEAK PULSE CURRENT IPP (%)
2014. 3. 31
Revision No : 2
2/2
.