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PG05EAESM

KEC

TVS Diode

SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES hTransient protection for data li...


KEC

PG05EAESM

File Download Download PG05EAESM Datasheet


Description
SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES hTransient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) hSmall package for use in portable electronics. hSuitable replacement for Multi-Layer Varistors in ESD protection applications. hProtects one I/O or power line. hLow clamping voltage. hLow leakage current. hSuffix U : Qualified to AEC-Q101. ex) PG05EAESM-RTK/HU APPLICATIONS hCell phone handsets and accessories. hMicroprocessor based equipment. hPersonal digital assistants (PDA’s) hNotebooks, desktops, & servers. hPortable instrumentation. hPagers peripherals. MAXIMUM RATING (Ta=25) CHARACTERISTIC Peak Pulse Power (tp=8/20Ǻs) Peak Pulse Current (tp=8/20Ǻs) Junction Temperature Storage Temperature SYMBOL PPK IPP Tj Tstg RATING 60 6.7 -55q150 -55q150 UNIT W A   A C G PG05EAESM TVS Diode for ESD Protection in Portable Electronics H E B 2 1 3 DIM MILLIMETERS A 1.60+_ 0.10 D B 0.85+_ 0.10 C 0.70+_ 0.10 D 0.27+0.10/-0.05 E 1.60+_ 0.10 G 1.00+_ 0.10 H 0.50 J 0.13+_ 0.05 J 1. (TVS) D1 CATHODE 2. (TVS) D2 CATHODE 3. COMMON ANODE ESM Marking Type Name D4 3 D2 D1 2 1 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Junction Capacitance VRWM VBR IR VC(1) VC(2) CJ TEST CONDITION - It=5mA VRWM=4.5V IPP=1A, tP=8/20ɫ IPP=5A, tP=8/20ɫ VR=0V, f=1MHz MIN. - 6.46 - TYP. 33 MAX...




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