PG05FBESC

SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES 50 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 5A(tp=8/20 s) Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line. Low clamping voltage. Low leakage current. APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Peak Pulse Power (tp=8/20 s) Junction Temperature Storage Temperature PPK Tj Tstg RATING 50 -55 150 -55 150 UNIT W PG05FBESC TVS Diode for ESD Protection in Portable Electronics ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current VRWM VBR IR Junction Capacitance CJ TEST CONDITION - It=1mA VRWM=5V VR=0V, f=1MHz MIN. 5.8 - TYP. - MAX. 5 7.8 5 60 UNIT V V A pF 2014. 3. 31 Revision No : 4 1/2 PG05FBESC 2014. 3. 31 Revision No : 4 2/2 ...