PG05GBUSV

SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES 200 Watts peak pulse power (tp=8/20 s) Transient protection for high-speed data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 24A(tp=8/20 s) Protects four I/O lines. Low clamping voltage. Low operating and leakage current. Small package for use in protable electronics. APPLICATIONS Cellular Phone Handsets and Accessories. Cordless Phones. Personal Digital Assistants (PDA’s) Notebooks, desktops PC, & servers. Portable Instrumentation. Set-Top Box, DVD Player. Digital Camera. A A1 CC H PG05GBUSV TVS Diode Array for ESD Protection in Portable Electronics B B1 1 5 DIM MILLIMETERS A 2.00+_ 0.20 2 A1 1.3+_ 0.1 B 2.1+_ 0.1 3 4D B1 1.25+_ 0.1 C 0.65 D 0.2+0.10/-0.05 G 0-0.1 H 0.9+_ 0.1 T T 0.15+0.1/-0.05 G 1. (TVS) D1 2. COMMON ANODE 3. (TVS) D2 4. (TVS) D3 5. (TVS) D4 USV MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Peak Pulse Power (tp=8/20 s) Peak Pulse Current (tp=8/20 s) Operating Temperature Storage Temperature PPK IPP Tj Tstg RATING 200 24 -55 150 -55 150 UNIT W A Marking 5 4 Type Name 5G 123 54 D4 D3 D1 D2 1 23 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current VRWM VBR IR Clamping Voltage VC Junction Capacitance CJ TEST CONDITION It=1mA VRWM=5V IPP=1A, tp=8/20 s IPP=24A, tp=8/20 s VR=0V, f=1MH...