PG12GSUSC

SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES 350 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 15A(tp=8/20 s) Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects on I/O or power line. Low clamping voltage. Low leakage current. APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Notebooks, desktops, & servers. Portable instrumentation. PG12GSUSC Single Line TVS Diode for ESD Protection in Portable Electronics MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Peak Pulse Power (tp=8/20 s) PPK Peak Pulse Current (tp=8/20 s) IPP Operating Temperature Tj Storage Temperature Tstg RATING 350 15 150 -55 150 UNIT W A ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current VRWM VBR IR Clamping Voltage VC Junction Capacitance CJ Electrostatic discharge VESD TEST CONDITION - It=1mA VRWM=12V IPP=5A, tp=8/20 s IPP=15A, tp=8/20 s VR=0V, f=1MHz IEC-61000-4-2 Air Contact MIN. - 13.8 20 20 TYP. - - MAX. 12 1 19 25 150 UNIT V V A V pF - KV 2014. 3. 31 Revision No : 3 1/2 PG12GSUSC 2014. 3. 31 Revision No : 3 2/2 ...