TVS Diode
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES 350 Watts peak pulse power (tp=8/...
Description
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES 350 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 15A(tp=8/20 s) Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects on I/O or power line. Low clamping voltage. Low leakage current.
APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals.
PG15GSUSC
Single Line TVS Diode for ESD Protection in Portable Electronics
B 1
G
E A
K F
L
H
2 D
J C
I
MM
1. ANODE 2. CATHODE
DIM A B C
MILLIMETERS 2.50+_ 0.1 1.25+_ 0.05 0.90 +_ 0.05
D 0.30+0.06/-0.04 E 1.70 +_0.05
F MIN 0.17 G 0.126+_ 0.03
H 0~0.1
I 1.0 MAX J 0.15+_ 0.05 K 0.4+_ 0.05
L 2 +4/-2
M 4~6
USC
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Peak Pulse Current (tp=8/20 s) Operating Temperature Storage Temperature
SYMBOL PPK IPP Tj Tstg
RATING 350 12
-55 150 -55 150
UNIT W A
Marking
2 Type Name
SD
Lot No. 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage
VRWM VBR IR VC
Junction Capacitance
CJ
TEST CONDITION -
It=1mA VRWM=15V IPP=12A, tp=8/20 s VR=...
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