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PG15GSUSC

KEC

TVS Diode

SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES 350 Watts peak pulse power (tp=8/...


KEC

PG15GSUSC

File Download Download PG15GSUSC Datasheet


Description
SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES 350 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 15A(tp=8/20 s) Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects on I/O or power line. Low clamping voltage. Low leakage current. APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. PG15GSUSC Single Line TVS Diode for ESD Protection in Portable Electronics B 1 G E A K F L H 2 D J C I MM 1. ANODE 2. CATHODE DIM A B C MILLIMETERS 2.50+_ 0.1 1.25+_ 0.05 0.90 +_ 0.05 D 0.30+0.06/-0.04 E 1.70 +_0.05 F MIN 0.17 G 0.126+_ 0.03 H 0~0.1 I 1.0 MAX J 0.15+_ 0.05 K 0.4+_ 0.05 L 2 +4/-2 M 4~6 USC MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Peak Pulse Current (tp=8/20 s) Operating Temperature Storage Temperature SYMBOL PPK IPP Tj Tstg RATING 350 12 -55 150 -55 150 UNIT W A Marking 2 Type Name SD Lot No. 1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage VRWM VBR IR VC Junction Capacitance CJ TEST CONDITION - It=1mA VRWM=15V IPP=12A, tp=8/20 s VR=...




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