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ESD5V0S1U-03W

Infineon

Silicon TVS Diodes

Silicon TVS Diodes • ESD / transient protection of data and power lines in 3.3 V / 5 V applications according to: IEC610...


Infineon

ESD5V0S1U-03W

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Description
Silicon TVS Diodes ESD / transient protection of data and power lines in 3.3 V / 5 V applications according to: IEC61000-4-2 (ESD): ± 30 kV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (surge): 40 A/600 W (8/20 µs) Max. working voltage: 5 V Low clamping voltage Low reverse current Pb-free (RoHS compliant) package Applications Uni or bi-directional operation possible (see application example page 5) Mobile communication Consumer products (STB, MP3, DVD, DSC...) LCD displays, camera Notebooks and desktop computers, peripherals - ESD5V0S... ESD5V0S1U-03W 12 Type ESD5V0S1U-03W ESD5V0S2U-06 ESD5V0S2U-06 3 D1 D2 12 Package SOD323 SOT23 Configuration 1 line, uni-directional 2 lines, uni-directional Marking yellow E E5 1 2011-06-17 ESD5V0S... Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol ESD contact discharge1) Peak pulse current (tp = 8 / 20 µs)2) Peak pulse power (tp = 8 / 20 µs)2) VESD Ipp Ppk Operating temperature range Top Storage temperature Tstg Value 30 40 600 -55...125 -65...150 Unit kV A W °C Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. Characteristics - Reverse working voltage Breakdown voltage I(BR) = 1 mA Reverse current VR = 3.3 V VR = 5 V VRWM V(BR) IR -5.5 6.7 5 8 --5 - - 20 Clamping voltage (positive transient) IPP = 5 A, tp = 8/20 µs2) IPP = 24 A, tp = 8/20 µs2) IPP = 40 A, tp = 8/20 µs2) VCL - 7.5 9.5 - 9 12 - 11...




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