Silicon TVS Diodes
Silicon TVS Diodes • ESD / transient protection of data and power lines
in 3.3 V / 5 V applications according to: IEC610...
Description
Silicon TVS Diodes ESD / transient protection of data and power lines
in 3.3 V / 5 V applications according to: IEC61000-4-2 (ESD): ± 30 kV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (surge): 40 A/600 W (8/20 µs)
Max. working voltage: 5 V Low clamping voltage Low reverse current Pb-free (RoHS compliant) package Applications Uni or bi-directional operation possible
(see application example page 5) Mobile communication Consumer products (STB, MP3, DVD, DSC...) LCD displays, camera Notebooks and desktop computers, peripherals
-
ESD5V0S...
ESD5V0S1U-03W
12
Type ESD5V0S1U-03W ESD5V0S2U-06
ESD5V0S2U-06
3
D1 D2
12
Package SOD323 SOT23
Configuration 1 line, uni-directional 2 lines, uni-directional
Marking yellow E E5
1 2011-06-17
ESD5V0S...
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
ESD contact discharge1)
Peak pulse current (tp = 8 / 20 µs)2) Peak pulse power (tp = 8 / 20 µs)2)
VESD Ipp Ppk
Operating temperature range
Top
Storage temperature
Tstg
Value 30 40 600
-55...125 -65...150
Unit kV A W °C
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Characteristics -
Reverse working voltage
Breakdown voltage I(BR) = 1 mA Reverse current VR = 3.3 V VR = 5 V
VRWM V(BR)
IR
-5.5 6.7
5 8
--5 - - 20
Clamping voltage (positive transient)
IPP = 5 A, tp = 8/20 µs2) IPP = 24 A, tp = 8/20 µs2) IPP = 40 A, tp = 8/20 µs2)
VCL - 7.5 9.5 - 9 12 - 11...
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