ZUMT591

SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR DRAFT SPECIFICATION ISSUE A – OCTOBER 94 FEATURES * Extremely low saturation voltage * 500mW power dissipation * 1 Amp continuous collector current (IC) APPLICATIONS * Ideally suited for space / weight critical applications ZUMT591 CE B SOT323 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. VALUE -80 -60 -5 -2 -1 -200 500 -55 to +150 UNIT V V V A A mA mW °C UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -80 V IC=-100µA, IE=-0 Collector-Emitter Breakdown Voltage VCEO(sus) -60 V IC=-10mA*, IB=-0 Emitter-Base Breakdown V(BR)EBO Voltage -5 V IE=-100µA, IC=-0 Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage ICBO ICES IEBO VCE(sat) Base-Emitter Saturation Voltage VBE(sat) -100 -100 -100 -0.3 -0.6 -1.2 nA nA nA V V V VCB=-60V VCE=-60V VEB=-4V, IC=-0 IC=-500mA, IB=-50mA* IC=-1A, IB=-100mA* IC=-1A, IB=-100mA* Base-Emitter Turn On Voltage VBE(on) -1.0 V * Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2% IC=-1A, VCE=-5V* ZUMT591 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. T...