SOT323 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
DRAFT SPECIFICATION ISSUE A – OCTOBER 94 FEATURES * Extremely low ...
SOT323
PNP SILICON PLANAR
HIGH PERFORMANCE
TRANSISTOR
DRAFT SPECIFICATION ISSUE A – OCTOBER 94 FEATURES * Extremely low saturation voltage * 500mW power dissipation * 1 Amp continuous collector current (IC) APPLICATIONS * Ideally suited for space / weight critical applications
ZUMT591
CE B
SOT323
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
VALUE -80 -60 -5 -2 -1 -200 500
-55 to +150
UNIT V V V A A mA
mW °C
UNIT CONDITIONS.
Collector-Base Breakdown Voltage
V(BR)CBO
-80
V IC=-100µA, IE=-0
Collector-Emitter Breakdown Voltage
VCEO(sus)
-60
V IC=-10mA*, IB=-0
Emitter-Base Breakdown V(BR)EBO Voltage
-5
V IE=-100µA, IC=-0
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
ICBO ICES IEBO VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
-100
-100
-100
-0.3 -0.6
-1.2
nA
nA
nA
V V
V
VCB=-60V VCE=-60V
VEB=-4V, IC=-0 IC=-500mA, IB=-50mA* IC=-1A, IB=-100mA* IC=-1A, IB=-100mA*
Base-Emitter Turn On Voltage
VBE(on)
-1.0 V
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%
IC=-1A, VCE=-5V*
ZUMT591
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. T...