SILICON EPITAXIAL PLANAR DIODE
SEMICONDUCTOR
TECHNICAL DATA
TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDI...
Description
SEMICONDUCTOR
TECHNICAL DATA
TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO.
FEATURES Low Series Resistance : rs=0.3(TYP.). Small Package : SOT-23.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 15 150
-55 150
UNIT V
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
CAPACITANCE(C2V)
UNIT
A 42 43.5
B 43 44.5
C
44 45.5
pF
D 45 46.5
E 46 47.5
Marking
Grade
K3Type Name
Lot No.
J K
D
KDV804M/S
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
B
F A
HM
C
EE
1 2 3N L
1. ANODE 1 2. CATHODE 1, 2 3. ANODE 2
G
O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27 F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.45 L 25 M 0.80 N 0.55 MAX O 0.75
1 23
TO-92M
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. ANODE 1 2. ANODE 2 3. CATHODE
3 21
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Reverse Current
Capacitance
VR IR C2V C8V
Capacitance Ratio
C2V/C8V
Series Resistance
rS
TEST CONDITION IR=10 A VR=15V VR=2V, f=1MHz VR=8V, f=1MHz
C=38pF, f=100MHz
1998. 6. 15
Revision No : 1
SOT-23
MIN. 15 42 24 1.65 -
TYP. 0.3
MAX. 50
47.5 28.8 1.8 0.4
UNIT V nA
pF
1/2
CAPACITANCE C (pF) FIGUR...
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