Document
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES Good C-V Linearity. Low Series Resistance. : rS=0.4 Small Package : USC.
(Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature Storage Temperature Range
VR Tj Tstg
RATING 15 150
-55 150
UNIT V
KDV358
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK E A K
F L
B 1
G
H
2 D
MM 1. ANODE 2. CATHODE
J C
I
DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6
USC
Marking
Type Name
VJ
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
IR1 IR2
Capacitance
C1V C4V
Capacitance Ratio
C1V/C4V
Series Resistance
rS
TEST CONDITION VR=15V VR=15V, Ta=60 VR=1V, f=1MHz VR=4V, f=1MHz
VR=1V, f=470MHz
MIN. -
19.5 8.0 2.2 -
TYP. -
MAX. 10 100 21.0 9.3 0.4
UNIT nA
pF -
2008 .9 11
Revision No : 1
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REVERSE CURRENT IR (A)
KDV358
-11
10
IR - VR
-12
10
-13
10 0
4 8 12 REVERSE VOLTAGE VR (V)
16
0.4 0.3
0.2
0.1 0 0.1
r s - VR
f=470MHz
1.0 REVERSE VOLTAGE VR (V)
10
∆(LOG CT) / ∆(LOG VR)
TOTAL CAPACITANCE CT (pF)
30 25 20 15 10
5 0
0.1
C T - VR
f=1MHz
1.0 REVERSE VOLTAGE VR (V)
10
∆(LOG CT) / ∆(LOG VR) - VR
0
-0.5
-1.0
-1.5 0.1
1.0 REVERSE VOLTAGE VR (V)
10
SERIES RESISTANCE rs (Ω)
2008 .9 .11
Revision No : 1
2/2
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