KDV350F

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V=2.8 (Min.) Low Series Resistance. : rS=0.5 (max.) Good C-V linearity. KDV350F VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK 21 CE DF MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 150 -55 150 UNIT V B A 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS 1.00+_ 0.05 0.80+0.10/-0.05 0.60+_ 0.05 0.30+_ 0.05 0.40 MAX 0.13+_ 0.05 Marking Type Name TFSC E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current IR1 IR2 Capacitance C1V C4V Capacitance Ratio C1V/C4V Series Resistance rS TEST CONDITION VR=15V VR=15V, Ta=60 VR=1V, f=1MHz VR=4V, f=1MHz VR=1V, f=470MHz MIN. - 15.5 5.0 2.8 - TYP. - MAX. 10 100 17.0 6.0 0.5 UNIT nA pF - 2004. 7. 14 Revision No : 0 1/2 REVERSE CURRENT IR (A) KDV350F -11 10 IR - VR 10 -12 10 -13 0 4 8 12 REVERSE VOLTAGE VR (V) 16 TOTAL CAPACITANCE CT (pF) 30 25 20 15 10 5 0 0.1 C T - VR f=1MHz 1.0 REVERSE VOLTAGE VR (V) 10 0.5 0.4 0.3 0.2 0.1 0 0.1 r s - VR f=470MHz 1.0 REVERSE VOLTAGE VR (V) 10 ∆(LOG CT) / ∆(LOG VR) ∆(LOG CT) / ∆(LOG VR) - VR 0 -0.5 -1.0 -1.5 0.1 1.0 REVERSE VOLTAGE VR (V) 10 SERIES RESISTANCE rs (Ω) 2004. 7. 14 Revision No : 0 2/2 ...