KDV258E

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =2.0(Min.) Low Series Resistance : rs=0.45 (Max.) KDV258E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CE 1 CATHODE MARK B A MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 15 150 -55 150 UNIT V 2 D 1. ANODE 2. CATHODE F DIM A B C D E F MILLIMETERS 1.60+_ 0.10 1.20+_ 0.10 0.80+_ 0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 ESC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Reverse Current IR Capacitance C1V C4V Capacitance Ratio K Series Resistance rS TEST CONDITION IR=1 A VR=10V VR=1V, f=1MHz VR=4V, f=1MHz VR=1V, f=470MHz MIN. 15 19.0 8.5 2.0 - TYP. - MAX. 10 21.0 10.0 0.45 UNIT V nA pF Marking Type Name U6 2003. 3. 25 Revision No : 0 1/2 REVERSE CURRENT IR (pA) CAPACITANCE C (pF) KDV258E 1K Ta=25 C IR - VR 100 10 0 2 4 6 8 10 12 14 16 REVERSE VOLTAGE VR (V) C - VR 100 f=1MHz Ta=25 C 10 1 0 5 10 15 20 REVERSE VOLTAGE VR (V) 2003. 3. 25 Revision No : 0 2/2 ...