Silicon Diode
SEMICONDUCTOR
TECHNICAL DATA
ANTENNA TUNNING APPLICATION
FEATURES Low Tuning Voltage : VT=3V. High Capacitance Ratio : C...
Description
SEMICONDUCTOR
TECHNICAL DATA
ANTENNA TUNNING APPLICATION
FEATURES Low Tuning Voltage : VT=3V. High Capacitance Ratio : C0.5V/C3V=2.6(Min.) Excellent C-V Characteristics, and Small Tracking Error.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature Storage Temperature Range
VR Tj Tstg
RATING 10 125
-55 125
UNIT V
KDV240E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK B A
C 1
2 D
1. ANODE 2. CATHODE
E
F
DIM A B C D E F
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05
ESC
Marking
Type Name
TL
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current Capacitance Capacitance Ratio
IR C0.5V C1.5V C3V C0.5V/C3V
Series Resistance
rS
TEST CONDITION VR=22V VR=0.5V, f=1MHz VR=1.5V, f=1MHz VR=3V, f=1MHz
VR=0.5V, f=470MHz
MIN. 3.8 2.1 1.1 2.6 -
TYP. -
MAX. 10 5.0 2.7 1.3 1.5
UNIT nA
pF
-
2007. 6. 11
Revision No : 0
1/2
REVERSE CURRENT IR (nA) TOTAL CAPACITANCE CT (pF)
KDV240E
IR - Tj
10 2
10 0
20 40 60 80 JUNCTION TEMPERATURE T j ( C)
100
C T - VR
8 f=1MHz
7 Ta=25 C
6 5 4 3 2 1 0
0 1 10
REVERSE VOLTAGE VR (V)
2007. 6. 11
Revision No : 0
2/2
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