MJ21195G

MJ21195G - PNP MJ21196G - NPN Silicon Power Transistors The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Device Dissipation @ TC = 25_C Derate above 25_C VCEO VCBO VEBO VCEX IC ICM IB PD 250 Vdc 400 Vdc 5 Vdc 400 Vdc 16 Adc 30 Adc 5 Adc 250 W 1.43 W/_C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +200 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Symbol RqJC Max Unit 0.7 _C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsem...