Document
MJ21195G - PNP MJ21196G - NPN
Silicon Power Transistors
The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized • High DC Current Gain • Excellent Gain Linearity • High SOA • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Device Dissipation @ TC = 25_C
Derate above 25_C
VCEO VCBO VEBO VCEX
IC ICM IB PD
250 Vdc 400 Vdc
5 Vdc 400 Vdc 16 Adc 30 Adc
5 Adc 250 W 1.43 W/_C
Operating and Storage Junction Temperature Range
TJ, Tstg −65 to +200 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS Characteristics
Thermal Resistance, Junction−to−Case
Symbol RqJC
Max Unit 0.7 _C/W
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
16 AMPERES COMPLEMENTARY SILICON-
POWER TRANSISTORS 250 VOLTS, 250 WATTS
SCHEMATIC
PNP CASE 3
NPN CASE 3
1 BASE
EMITTER 2
1 BASE
EMITTER 2
3
12 TO−204AA (TO−3)
CASE 1−07 STYLE 1
MARKING DIAGRAM
MJ2119xG AYWW MEX
MJ2119x = Device Code
x = 5 or 6
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX
= Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
MJ21195G
TO−204 (Pb−Free)
100 Units / Tray
MJ21196G
TO−204 (Pb−Free)
100 Units / Tray
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 6
1
Publication Order Number: MJ21195/D
MJ21195G − PNP MJ21196G − NPN
ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
Emitter Cutoff Current (VCE = 5 Vdc, IC = 0)
Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 80 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, VCE = 5 Vdc)
Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc)
Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc)
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = .