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MJ21196G Dataheets PDF



Part Number MJ21196G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon Power Transistors
Datasheet MJ21196G DatasheetMJ21196G Datasheet (PDF)

MJ21195G - PNP MJ21196G - NPN Silicon Power Transistors The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain • Excellent Gain Linearity • High SOA • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base .

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MJ21195G - PNP MJ21196G - NPN Silicon Power Transistors The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain • Excellent Gain Linearity • High SOA • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Device Dissipation @ TC = 25_C Derate above 25_C VCEO VCBO VEBO VCEX IC ICM IB PD 250 Vdc 400 Vdc 5 Vdc 400 Vdc 16 Adc 30 Adc 5 Adc 250 W 1.43 W/_C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +200 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Symbol RqJC Max Unit 0.7 _C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS SCHEMATIC PNP CASE 3 NPN CASE 3 1 BASE EMITTER 2 1 BASE EMITTER 2 3 12 TO−204AA (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAM MJ2119xG AYWW MEX MJ2119x = Device Code x = 5 or 6 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin ORDERING INFORMATION Device Package Shipping MJ21195G TO−204 (Pb−Free) 100 Units / Tray MJ21196G TO−204 (Pb−Free) 100 Units / Tray © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 6 1 Publication Order Number: MJ21195/D MJ21195G − PNP MJ21196G − NPN ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 80 Vdc, t = 1 s (non−repetitive) ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, VCE = 5 Vdc) Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = .


MJ21195G MJ21196G MUN2114


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