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NJD1718 Dataheets PDF



Part Number NJD1718
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power Transistors
Datasheet NJD1718 DatasheetNJD1718 Datasheet (PDF)

NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. Features • Low Collector−Emitter Saturation Voltage • High Switching Speed • Epoxy Meets UL 94 V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATIN.

  NJD1718   NJD1718



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NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. Features • Low Collector−Emitter Saturation Voltage • High Switching Speed • Epoxy Meets UL 94 V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCB VCEO VEB IC ICM IB PD −50 Vdc −50 Vdc −5 Vdc −2 Adc −3 Adc −0.4 Adc 15 W 0.1 W/°C Total Device Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD 1.68 W 0.011 W/°C Operating and Storage Junction Temperature Range TJ, Tstg − 65 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 2) RRqqJJCA °C/W 10 89.3 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2013 October, 2013 − Rev. 4 1 http://onsemi.com SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS COLLECTOR 2, 4 1 BASE 3 EMITTER 4 12 3 DPAK CASE 369C STYLE 1 MARKING DIAGRAM AYWW J 1718G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Device ORDERING INFORMATION Device Package Shipping† NJD1718T4G DPAK 2500 / Tape & Reel (Pb−Free) NJVNJD1718T4G DPAK 2500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NJD1718/D NJD1718, NJVNJD1718 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Breakdown Voltage (Note 3) (IC = −10 mAdc, IB = 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = −50 Vdc, IE = 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = −5 Vdc, IC = 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain (Note 3) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = −0.5 A, VCE = 2 V) (IC = −1.5 Adc, VCE = 2 Vdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.


NSBA114YF3 NJD1718 NJVNJD1718


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