NJVNJD1718

NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier and power switching applications. Features Low Collector−Emitter Saturation Voltage High Switching Speed Epoxy Meets UL 94 V−0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCB VCEO VEB IC ICM IB PD −50 Vdc −50 Vdc −5 Vdc −2 Adc −3 Adc −0.4 Adc 15 W 0.1 W/°C Total Device Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD 1.68 W 0.011 W/°C Operating and Storage Junction Temperature Range TJ, Tstg − 65 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance ...