NJD1718, NJVNJD1718
Power Transistors
PNP Silicon DPAK For Surface Mount Applications
Designed for high−gain audio ampl...
NJD1718, NJVNJD1718
Power
Transistors
PNP Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier and power switching applications.
Features
Low Collector−Emitter Saturation Voltage High Switching Speed Epoxy Meets UL 94 V−0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation
@ TC = 25°C Derate above 25°C
VCB VCEO VEB
IC ICM IB PD
−50 Vdc −50 Vdc −5 Vdc −2 Adc −3 Adc −0.4 Adc
15 W 0.1 W/°C
Total Device Dissipation @ TA = 25°C (Note 1) Derate above 25°C
PD 1.68 W
0.011
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg − 65 to +150 °C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM C V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance ...