Document
NJW44H11G
80 V NPN, 10 A Power Transistor
These series of plastic, silicon NPN power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
Features
• Fast Switching Speeds • High Frequency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Benefits
• Reliable Performance at Higher Powers • Symmetrical Characteristics in Complementary Configurations • Accurate Reproduction of Input Signal • Greater Dynamic Range • High Amplifier Bandwidth
Applications
• High−end Consumer Audio Products
♦ Home Amplifiers ♦ Home Receivers
MAXIMUM RATINGS (TA = 25°C) Rating
Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak (Note 1) Total Power Dissipation @ TC = 25°C THERMAL CHARACTERISTICS
Symbol
VCEO VEBO
IC ICM PD
Max Unit 80 Vdc 5.0 Vdc 10 A 20 A 120 Watts
Characteristic
Symbol Max Unit
Thermal Resistance, Junction to Case
Junction and Storage Temperature Range
RqJC TJ, Tstg
1.04
− 65 to +150
°C/W °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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80 VOLT, 10 AMPS NPN POWER TRANSISTORS
NPN COLLECTOR 2, 4
1 BASE
EMITTER 3
MARKING 4 DIAGRAM
NJWxxxG AYWW
1 23
xxx G A Y WW
TO−3P PLASTIC CASE 340AB
12
= TBD = Pb−Free Package = Assembly Location = Year = Work Week
3
ORDERING INFORMATION
Device NJW44H11G
Package
TO−3P (Pb−Free)
Shipping 30 Units/Rail
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 0
1
Publication Order Number: NJW44H11/D
NJW44H11G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0)
Collector−Cutoff Current (VCE = Rated VCEO, VBE = 0)
Emitter Cutoff Current (VBE = 5.0 Vdc)
VCEO
80
−
− Vdc
ICES
−
− 10 mAdc
IEBO
−
− 10 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 2 A, VCE = 2 V) (IC = 4 A, VCE = 2 V)
Collector−Emitter Saturation Voltage (IC = 8 A, IB = 400 mA)
Base−Emitter Turn−on Voltage (IC = 8 A, VCE = 2.0 V)
hFE − 100 − 400 80 − 320
VCE(sat)
−
− 1.0 V
VBE(on)
−
− 1.5 V
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cutoff Frequency (IC = 500 mA, VCE = 5 V, f = 1.0 MHz)
Cobo
−
65
−
pF
fT − 85 − MHz
SWITCHING TIMES
Delay and Rise Times (IC = 5.0 Adc, IB1 = 0.5 A)
Storage Time (IC = 5.0 Adc, IB1 = IB2 = 0.5 A)
Fall Time (IC = 5.0 Adc, IB1 = IB2 = 0.5 A)
td + tr
−
300
−
ts − 500 −
tf − 140 −
ns ns ns
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hFE, DC CURRENT GAIN
COLLECTOR−EMITTER SATURATION VOLTAGE (V)
500 450 400 350 300 250 200 150 100
50 0 0.01
NJW44H11G
TYPICAL CHARACTERISTICS
150°C
25°C
−55°C
VCE = 2 V 0.1 1 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain
hFE, DC CURRENT GAIN
500 450
400 350 300 250 200 150 100
50 0
10 0.01
150°C
25°C
−55°C
VCE = 4 V 0.1 1 IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain
10
0.40
0.35 0.30
VCE(sat) @ IC/IB = 10
150°C
0.25 0.20 25°C
0.15
0.10 −55°C
0.05
0 0.01
0.1
1
IC, COLLECTOR CURRENT (A) Figure 3. Collector Emitter Saturation Voltage
10
COLLECTOR−EMITTER SATURATION VOLTAGE (V)
0.40
0.35 0.30
VCE(sat) @ IC/IB = 20
150°C
0.25 25°C
0.20
0.15
0.10 −55°C
0.05
0 0.01
0.1
1 10
IC, COLLECTOR CURRENT (A) Figure 4. Collector Emitter Saturation Voltage
1.2
1.0 −55°C
0.8 25°C
0.6 150°C 0.4
0.2 VBE(sat) @ IC/IB = 10
0 0.01
0.1
1
IC, COLLECTOR CURRENT (A) Figure 5. Base Emitter Saturation Voltage
10
BASE−EMITTER VOLTAGE (V)
1.2
1.0
−55°C 0.8
25°C 0.6
0.4 150°C
0.2 0 0.01
VBE(on) @ VCE = 4 V
0.1 1 IC, COLLECTOR CURRENT (A) Figure 6. Base Emitter “ON” Voltage
10
BASE−EMITTER SATURATION VOLTAGE (V)
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Cob, OUTPUT CAPACITANCE (pF)
NJW44H11G
250 200 150 100
50 0 0
TYPICAL CHARACTERISTICS
TJ = 25°C f = 1 MHz
10 20 30 40 50 60 70 VCB, COLLECTOR−BASE VOLTAGE Figure 7. Output Capacitance
80
fT, CURRENT BANDWIDTH PRODUCT (MHz)
90
80
70
60
50
40
30
20 10
0 0.01
VCE = 5 V ftest = 1 MHz TJ = 25°C 0.1 1
10
IC, COLLECTOR CURRENT (A) Figure 8. Current Gain Bandwidth Product
140 120 100
80 60 40 20
0 0
20 40 60 80 100 120 140 T, TEMPERATURE (°C)
Figure 9. Power Temperature Derating
160
IC, COLLECTOR CURRENT (A)
100 10 1 0.1
0.01 1
1 Sec
1 mS 10 mS
10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 10. Safe Operating Area (SOA)
100
PD, POWER DISSIPATION (W)
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NJW44H11G
PACKAGE DIMENSIONS TO−3P−3L.