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NJW44H11G Dataheets PDF



Part Number NJW44H11G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power Transistors
Datasheet NJW44H11G DatasheetNJW44H11G Datasheet (PDF)

NJW44H11G 80 V NPN, 10 A Power Transistor These series of plastic, silicon NPN power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Fast Switching Speeds • High Frequency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Benefits • Reliable Performance at Higher Powers • Symmetrical Characteristics in Complementary Config.

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NJW44H11G 80 V NPN, 10 A Power Transistor These series of plastic, silicon NPN power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Fast Switching Speeds • High Frequency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Benefits • Reliable Performance at Higher Powers • Symmetrical Characteristics in Complementary Configurations • Accurate Reproduction of Input Signal • Greater Dynamic Range • High Amplifier Bandwidth Applications • High−end Consumer Audio Products ♦ Home Amplifiers ♦ Home Receivers MAXIMUM RATINGS (TA = 25°C) Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak (Note 1) Total Power Dissipation @ TC = 25°C THERMAL CHARACTERISTICS Symbol VCEO VEBO IC ICM PD Max Unit 80 Vdc 5.0 Vdc 10 A 20 A 120 Watts Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Junction and Storage Temperature Range RqJC TJ, Tstg 1.04 −  65 to +150 °C/W °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 80 VOLT, 10 AMPS NPN POWER TRANSISTORS NPN COLLECTOR 2, 4 1 BASE EMITTER 3 MARKING 4 DIAGRAM NJWxxxG AYWW 1 23 xxx G A Y WW TO−3P PLASTIC CASE 340AB 12 = TBD = Pb−Free Package = Assembly Location = Year = Work Week 3 ORDERING INFORMATION Device NJW44H11G Package TO−3P (Pb−Free) Shipping 30 Units/Rail © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 0 1 Publication Order Number: NJW44H11/D NJW44H11G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) Collector−Cutoff Current (VCE = Rated VCEO, VBE = 0) Emitter Cutoff Current (VBE = 5.0 Vdc) VCEO 80 − − Vdc ICES − − 10 mAdc IEBO − − 10 mAdc ON CHARACTERISTICS DC Current Gain (IC = 2 A, VCE = 2 V) (IC = 4 A, VCE = 2 V) Collector−Emitter Saturation Voltage (IC = 8 A, IB = 400 mA) Base−Emitter Turn−on Voltage (IC = 8 A, VCE = 2.0 V) hFE − 100 − 400 80 − 320 VCE(sat) − − 1.0 V VBE(on) − − 1.5 V DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cutoff Frequency (IC = 500 mA, VCE = 5 V, f = 1.0 MHz) Cobo − 65 − pF fT − 85 − MHz SWITCHING TIMES Delay and Rise Times (IC = 5.0 Adc, IB1 = 0.5 A) Storage Time (IC = 5.0 Adc, IB1 = IB2 = 0.5 A) Fall Time (IC = 5.0 Adc, IB1 = IB2 = 0.5 A) td + tr − 300 − ts − 500 − tf − 140 − ns ns ns http://onsemi.com 2 hFE, DC CURRENT GAIN COLLECTOR−EMITTER SATURATION VOLTAGE (V) 500 450 400 350 300 250 200 150 100 50 0 0.01 NJW44H11G TYPICAL CHARACTERISTICS 150°C 25°C −55°C VCE = 2 V 0.1 1 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain hFE, DC CURRENT GAIN 500 450 400 350 300 250 200 150 100 50 0 10 0.01 150°C 25°C −55°C VCE = 4 V 0.1 1 IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain 10 0.40 0.35 0.30 VCE(sat) @ IC/IB = 10 150°C 0.25 0.20 25°C 0.15 0.10 −55°C 0.05 0 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 3. Collector Emitter Saturation Voltage 10 COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.40 0.35 0.30 VCE(sat) @ IC/IB = 20 150°C 0.25 25°C 0.20 0.15 0.10 −55°C 0.05 0 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 4. Collector Emitter Saturation Voltage 1.2 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 VBE(sat) @ IC/IB = 10 0 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 5. Base Emitter Saturation Voltage 10 BASE−EMITTER VOLTAGE (V) 1.2 1.0 −55°C 0.8 25°C 0.6 0.4 150°C 0.2 0 0.01 VBE(on) @ VCE = 4 V 0.1 1 IC, COLLECTOR CURRENT (A) Figure 6. Base Emitter “ON” Voltage 10 BASE−EMITTER SATURATION VOLTAGE (V) http://onsemi.com 3 Cob, OUTPUT CAPACITANCE (pF) NJW44H11G 250 200 150 100 50 0 0 TYPICAL CHARACTERISTICS TJ = 25°C f = 1 MHz 10 20 30 40 50 60 70 VCB, COLLECTOR−BASE VOLTAGE Figure 7. Output Capacitance 80 fT, CURRENT BANDWIDTH PRODUCT (MHz) 90 80 70 60 50 40 30 20 10 0 0.01 VCE = 5 V ftest = 1 MHz TJ = 25°C 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 8. Current Gain Bandwidth Product 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 T, TEMPERATURE (°C) Figure 9. Power Temperature Derating 160 IC, COLLECTOR CURRENT (A) 100 10 1 0.1 0.01 1 1 Sec 1 mS 10 mS 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 10. Safe Operating Area (SOA) 100 PD, POWER DISSIPATION (W) http://onsemi.com 4 NJW44H11G PACKAGE DIMENSIONS TO−3P−3L.


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