ULTRA FAST RECOVERY RECTIFIER DIODE
SEMICONDUCTOR
TECHNICAL DATA
U10A3CIC
ULTRA FAST RECOVERY RECTIFIER DIODE
SWITCHING TYPE POWER SUPPLY APPLICATION CONV...
Description
SEMICONDUCTOR
TECHNICAL DATA
U10A3CIC
ULTRA FAST RECOVERY RECTIFIER DIODE
SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION.
FEATURES Ultra-Fast Recovery Time for High Efficiency. Low Forward Voltage Drop, High Current Capability, and Low Power Loss.
APPLICATION Switching Power Supply. Home Appliances, Office Equipment. Telecommunication, Factory Automation.
K
A S
E
LL M
DD
NN
J
GF B P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5 R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
POLARITY
1
2
3
123
Q
1. ANODE 2. CATHODE 3. ANODE
TO-220IS
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Maximum Reverse Voltage
Average Output Rectified Current
(Tc=125 )
(Note1)
VRM IO
300 V 10 A
Peak One Cycle Surge Forward Current (Non-Repetitive)
50 (50Hz)
IFSM
A
60 (60Hz)
Junction Temperature
Tj -40~150
Storage Temperature Range
Tstg -40~150
(Note1) : Average forward current of centertap full wave connection.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Forward Voltage Reverse Current Reverse Recovery Time
(Note2) (Note2) (Note2)
VFM IRM trr
Thermal Resistance (Note2) : A Value of one cell.
(Note2)
Rth(j-c)
TEST CONDITION IFM=5A VRM=Rated IF=IR=100mA Junction to Case
MIN. -
TYP. -
MAX. 1.3 10 60 4.0
UNIT V A ns /W
2007. 5. ...
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