RB520S-30
Taiwan Semiconductor Small Signal Product
200mW, Low VF SMD Schottky Barrier Diode
FEATURES
- Low power loss, ...
RB520S-30
Taiwan Semiconductor Small Signal Product
200mW, Low VF SMD
Schottky Barrier Diode
FEATURES
- Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: SOD-523F small outline plastic package - Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Polarity: Indicated by cathode band - Weight: 1.68 ± 0.5 mg - Marking code: B
SOD-523F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Power Dissipation
PD 200
Repetitive Peak Reverse Voltage
VRRM
30
Reverse Voltage Mean Forward Current @ TL=100oC (Lead Non-Repetitive Peak Forward Surge Current
(Note 1)
VR IO IFSM
30 200
1
Thermal Resistance (Junction to Ambient)
RθJA
500
Junction and Storage Temperature Range
TJ ,TSTG
-55 to +125
Note 1: Test condition: 8.3 ms single half sine-wave superimposed on rated load (JEDEC method)
UNIT
mW V V mA A
°C/W oC
PARAMETER Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current
SYMBOL V(BR) VF IR
MIN 30 -
TYP
MAX -
0.6 1
TEST CONDITION IR = 500 µA IF = 200 mA VR = 10 V
UNIT V V µA
Document Number: DS_S1404003
Version: B14
Small Signal Product
RATINGS AND CHARACT...
