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VB20120S-E3 Dataheets PDF



Part Number VB20120S-E3
Manufacturers Vishay
Logo Vishay
Description High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VB20120S-E3 DatasheetVB20120S-E3 Datasheet (PDF)

V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20120S 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VF20120S 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO.

  VB20120S-E3   VB20120S-E3


VF20120S-E3 VB20120S-E3 VI20120S-E3


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