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Schottky Rectifier. VSSB420S-M3 Datasheet

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Schottky Rectifier. VSSB420S-M3 Datasheet






VSSB420S-M3 Rectifier. Datasheet pdf. Equivalent




VSSB420S-M3 Rectifier. Datasheet pdf. Equivalent





Part

VSSB420S-M3

Description

Surface Mount Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com VSSB420S-M3 Vishay Gener al Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® DO-214AA (SMB) PRIMARY CHARACTERISTIC S IF(AV) VRRM IFSM VF at IF = 4.0 A TJ max. Package 4.0 A 200 V 40 A 0.71 V 150 °C DO-214AA (SMB) Diode variation Single die FEATURES • Low profile package • Ideal for automated placeme nt • Trench MOS Schottky.
Manufacture

Vishay

Datasheet
Download VSSB420S-M3 Datasheet


Vishay VSSB420S-M3

VSSB420S-M3; technology • Low power losses, high e fficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, L F maximum peak of 260 °C • Material categorization: For definitions of comp liance please see www.vishay.com/doc?99 912 TYPICAL APPLICATIONS For use in hig h frequency converters, freewheeling di odes, DC/DC converters and polarity pro tection applications. MECHA.


Vishay VSSB420S-M3

NICAL DATA Case: DO-214AA (SMB) Moldi ng compound meets UL 94 V-0 flammabilit y rating Base P/N-M3 - halogen-free and RoHS-compliant, commercial grade Termi nals: Matte tin plated leads, solderabl e per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker t est Polarity: Color band denotes the ca thode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted.


Vishay VSSB420S-M3

) PARAMETER SYMBOL Device marking cod e Maximum repetitive peak reverse volt age Maximum DC forward current Peak for ward surge current 10 ms single half si ne-wave superimposed on rated load VRRM IF (1) IF (2) IFSM Voltage rate o f change (rated VR) Operating junction and storage temperature range dV/dt TJ , TSTG Notes (1) Units mounted on PCB with 20 mm x 20 mm p.

Part

VSSB420S-M3

Description

Surface Mount Trench MOS Barrier Schottky Rectifier



Feature


www.vishay.com VSSB420S-M3 Vishay Gener al Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® DO-214AA (SMB) PRIMARY CHARACTERISTIC S IF(AV) VRRM IFSM VF at IF = 4.0 A TJ max. Package 4.0 A 200 V 40 A 0.71 V 150 °C DO-214AA (SMB) Diode variation Single die FEATURES • Low profile package • Ideal for automated placeme nt • Trench MOS Schottky.
Manufacture

Vishay

Datasheet
Download VSSB420S-M3 Datasheet




 VSSB420S-M3
www.vishay.com
VSSB420S-M3
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS®
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 4.0 A
TJ max.
Package
4.0 A
200 V
40 A
0.71 V
150 °C
DO-214AA (SMB)
Diode variation
Single die
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, freewheeling diodes,
DC/DC converters and polarity protection applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS-compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF (1)
IF (2)
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
Notes
(1) Units mounted on PCB with 20 mm x 20 mm pad areas
(2) Free air, mounted on recommended PCB 1 oz. pad area
VSSB420S
V4D
200
4.0
1.8
40
10 000
-40 to +150
UNIT
V
A
A
V/μs
°C
Revision: 28-Nov-13
1 Document Number: 89317
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VSSB420S-M3
www.vishay.com
VSSB420S-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current per diode
Typical junction capacitance
IF = 4.0 A
VR = 180 V
VR = 200 V
4.0 V, 1 MHz
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
CJ
1.44
0.71
3
0.7
4
1.1
120
Notes
(3) Pulse test: 300 μs pulse width, 1 % duty cycle
(4) Pulse test: Pulse width 40 ms
MAX.
1.90
0.80
-
-
150
10
-
UNIT
V
μA
mA
μA
mA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSB420S
Typical thermal resistance
RJA (1)
RJM (2)
120
15
Notes
(1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance RJA - junction to ambient
(2) Units mounted on PCB with 20 mm x 20 mm copper pad areas; thermal resistance RJM - junction to mount
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSSB420S-M3/52T
0.096
52T
VSSB420S-M3/5BT
0.096
5BT
BASE QUANTITY
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5 TM Measured at Terminal
0
0 25 50 75 100 125
TM - Mount Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
4
D = 0.5 D = 0.8
3.5 D = 0.3
D = 0.2
3.0
2.5
D = 0.1
2.0
D = 1.0
1.5 T
1.0
0.5
D = tp/T
tp
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 28-Nov-13
2 Document Number: 89317
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VSSB420S-M3
www.vishay.com
VSSB420S-M3
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0
TA = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
10
1
0.1
0.01
TA = 150 °C
TA = 125 °C
TA = 100 °C
0.001
0.0001
TA = 25 °C
0.00001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1000
Junction to Ambient
100
10
1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.085 (2.159)
MAX.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.220 REF.
Revision: 28-Nov-13
3 Document Number: 89317
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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