Zener Diode. YFZV10B Datasheet

YFZV10B Datasheet PDF, Equivalent


Part Number

YFZV10B

Description

Zener Diode

Manufacture

Rohm

Total Page 7 Pages
PDF Download
Download YFZV10B Datasheet PDF


YFZV10B Datasheet
Zener Diode
YFZVFH series
Datasheet
Application
Dimensions (Unit : mm)
AEC-Q101 Qualified
Land size figure (Unit : mm)
Voltage regulation
1.40 0.10
0.17 0.10
0.05
1.1
Features
1) Small power mold type (TUMD2M)
2) High reliability
3) By chip-mouter,
automatic mouting is possible.
Construction
Silicon epitaxial planar
0
0.10
TUMD2M
0.80 0.05
0.20
0.600.10
ROHM : TUMD2M
dot (year week factory) day
EX. YFZVFH3.6B
 Structure
Taping dimensions (Unit : mm)
Cathode
Anode
4.0±0.1 2.0±0.05
φ1.15.555±0.01.1
      0
0.25±0.05
1.43±0.05
4.0±0.1
φ1.01.0±0.02.2
     0
0.9±0.08
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Power dissipation ()
P 500 mW
Junction temperature
Storage temperature
Operating temperature
Tj 150
Tstg 55 to 150
Topr 55 to 150
°C
°C
°C
() Device mounted on glass-epoxy board(50×50mm, t=1.6mm) Solder land (10×10mm)
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/6
2015.05 - Rev.B

YFZV10B Datasheet
YFZVFH series
Data Sheet
Electrical characteristics (Ta= 25°C)
Symbol
TYP.
Zener voltage : VZ(V)
Dynamic Impedance : Reverse current :
ZZ()
IR(A)
MIN.
MAX. IZ(mA) MAX.
IZ(mA)
MAX.
VR(V)
YFZV 2.0B 2.020 2.200
20
140
20
120 0.5
YFZV 2.2B 2.220 2.410
20
120
20
120 0.7
YFZV 2.4B 2.430 2.630
20
100
20
120 1.0
YFZV 2.7B 2.690 2.910
20
100
20
100 1.0
YFZV 3.0B 3.010 3.220
20
80
20
50 1.0
YFZV 3.3B 3.320 3.530
20
70
20
20 1.0
YFZV 3.6B 3.600 3.845
20
60
20
10 1.0
YFZV 3.9B 3.890 4.160
20
50
20
5 1.0
YFZV 4.3B 4.170 4.430
20
40
20
5 1.0
YFZV 4.7B 4.550 4.800
20
25
20
5 1.0
YFZV 5.1B 4.940 5.200
20
20
20
5 1.5
YFZV 5.6B 5.450 5.730
20
13
20
5 2.5
YFZV 6.2B 5.960 6.270
20
10
20
5 3.0
YFZV 6.8B 6.490 6.830
20
8
20
2 3.5
YFZV 7.5B 7.070 7.450
20
8
20 0.5 4.0
YFZV 8.2B 7.780 8.190
20
8
20 0.5 5.0
YFZV 9.1B 8.570 9.010
20
8
20 0.5 6.0
YFZV 10B
9.410 9.900
20
8
20 0.2 7.0
YFZV 11B 10.500 11.050
10
10
10
0.2 8.0
YFZV 12B 11.440 12.030
10
12
10
0.2 9.0
YFZV 13B 12.550 13.210
10
14
10
0.2
10
YFZV 15B 13.890 14.620
10
16
10
0.2
11
YFZV 16B 15.250 16.040
10
18
10
0.2
12
YFZV 18B 16.820 17.700
10
23
10
0.2
13
YFZV 20B 18.630 19.590
10
28
10
0.2
15
YFZV 22B 20.640 21.710
5
30
5
0.2 17
YFZV 24B 22.610 23.770
5
35
5
0.2 19
YFZV 27B 24.970 26.260
5
45
5
0.2 21
YFZV 30B 27.700 29.130
5
55
5
0.2 23
YFZV 33B 30.320 31.880
5
65
5
0.2 25
YFZV 36B 32.790 34.490
5
75
5
0.2 27
YFZV 39B
35.360 37.190
5
85
5
0.2 30
(1) The zener voltage(VZ) is measured 40ms after power is supplied.
(2) The Dynamic Impedance(ZZ) are measured by superimposing a minute alternating current
on the regulated current(IZ)
MARKING (TYPE NO.)
TYPE
YFZV 2.0B
YFZV 2.2B
YFZV 2.4B
YFZV 2.7B
YFZV 3.0B
YFZV 3.3B
YFZV 3.6B
YFZV 3.9B
YFZV 4.3B
YFZV 4.7B
YFZV 5.1B
YFZV 5.6B
YFZV 6.2B
YFZV 6.8B
YFZV 7.5B
YFZV 8.2B
TYPE  NO.
N1
N4
N5
N3
N4
N5
N6
N7
N8
N9
NA
NB
NC
ND
NE
NF
TYPE
YFZV 9.1B
YFZV 10B
YFZV 11B
YFZV 12B
YFZV 13B
YFZV 15B
YFZV 16B
YFZV 18B
YFZV 20B
YFZV 22B
YFZV 24B
YFZV 27B
YFZV 30B
YFZV 33B
YFZV 36B
YFZV 39B
TYPE  NO.
NG
NH
NJ
NK
NL
NM
NN
NP
NQ
NR
NS
NT
NU
NV
NW
NX
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/6
2015.05 - Rev.B


Features Datasheet pdf Zener Diode YFZVFH series Datasheet Application Dimensions (Unit : mm ) AEC-Q101 Qualified Land size figu re (Unit : mm) Voltage regulation 1.4 0  0.10 0.17 0.10 0.05 1.1 2.00  0.10 2.50  0.20 0.8 0.5 2.0 Features 1) Small power mold type (TUMD2M) N6 2) High reliability 3) By chip-mouter, automatic mouting is poss ible. Construction Silicon epitaxial planar 0~ 0.10 TUMD2M 0.80  0. 05 0.20 0.600.10 ROHM : TUMD2M dot (year week factory)  day EX. YFZ VFH3.6B  Structure Taping di mensions (Unit : mm) Cathode Anode 4. 0±0.1 2.0±0.05 φ1.15.555±0.0 1.1       0 0.25±0.05 1.75 ±0.1 3.5±0.05 2.75 8.0±0.2 2.8±0.0 5 1.43±0.05 4.0±0.1 φ1.01.0 ±0.02.2      0 0.9±0.08 Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Powe r dissipation () P 500 mW Junction temperature Storage temperature Operat ing temperature Tj 150 Tstg 55 to 150 Topr 55 to 150 °C °C °C () Device mounted on glass-epoxy board(50×50mm, t=1.6mm) Solder land (10×10m.
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