ZDT795A

SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ISSUE 1 - JULY 1999 ZDT795A C1 C1 C2 C2 PARTMARKING DETAIL – T795A B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE -140 -140 -5 -1 -0.5 -55 to +150 UNIT V V V A A °C THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at Tamb = 25°C* Any single die “on” Both die “on” equally Ptot 2.25 W 2.75 W Derate above 25°C* Any single die “on” Both die “on” equally 18 mW/ °C 22 mW/ °C Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. ZDT795A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -140 V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -140 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA, IC=0 Collector Cutoff Current ICBO -0.1 µA VCB=-100V Emitter Cutoff Current IEBO Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) -0.1 µA -0.3 -0.3 -0.25 V V V -0.95 V VEB=-4V, IE=0 IC=-100mA, IB=-...