www.vishay.com
V10PM12-M3, V10PM12HM3
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barri...
www.vishay.com
V10PM12-M3, V10PM12HM3
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.53 V at IF = 5 A
TMBS® eSMP® Series
K
1 2
TO-277A (SMPC)
K Cathode
Anode 1 Anode 2
FEATURES
Very low profile - typical height of 1.1 mm
Available
Ideal for automated placement
Trench MOS
Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
AEC-Q101 qualified
Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package
10 A 120 V 160 A 0.63 V 150 °C TO-277A (SMPC)
Diode variation
Single die
MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current ...