V30100PW-M3

www.vishay.com V30100PW-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 8 A TMBS® FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-3PW PIN 1 PIN 3 PIN 2 CASE TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 100 V IFSM EAS at L = 60 mH 120 A 150 mJ VF at IF = 15 A 0.68 V TJ max. 150 °C Package TO-3PW Diode variations Dual common cathode MECHANICAL DATA Case: TO-3PW Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode VRRM IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per dio...