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VB10150S

Vishay

High Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V10150S, VF10150S, VB10150S, VI10150S Vishay General Semiconductor High Voltage Trench MOS Barrier Scho...


Vishay

VB10150S

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Description
www.vishay.com V10150S, VF10150S, VB10150S, VI10150S Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V10150S 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF10150S PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. A NC VB10150S NC K A HEATSINK 3 2 1 VI10150S PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 10 A 150 V 120 A 0.69 V 150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variation Single die MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TA = 25 °C unl...




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