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V10150S, VF10150S, VB10150S, VI10150S
Vishay General Semiconductor
High Voltage Trench MOS Barrier Scho...
www.vishay.com
V10150S, VF10150S, VB10150S, VI10150S
Vishay General Semiconductor
High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.59 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V10150S
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB K
123
VF10150S
PIN 1
PIN 2
PIN 3
TO-262AA K
FEATURES
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package) Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
A NC
VB10150S
NC K A HEATSINK
3 2 1
VI10150S
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
Package
10 A 150 V 120 A 0.69 V 150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variation
Single die
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unl...