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VS-19TQ015SPbF
Vishay Semiconductors
High Performance Schottky Rectifier, 19 A
Base cathode
2
D2PAK
...
www.vishay.com
VS-19TQ015SPbF
Vishay Semiconductors
High Performance
Schottky Rectifier, 19 A
Base cathode
2
D2PAK
1 N/C
3 Anode
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM max. TJ max. Diode variation
EAS
D2PAK 19 A 15 V 0.36 V
522 mA at 100 °C 125 °C
Single die 6.75 mJ
FEATURES
125 °C TJ operation (VR < 5 V) Optimized for OR-ing applications
Ultralow forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
AEC-Q101 qualified
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
The VS-19TQ015SPbF
Schottky rectifier has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM IFSM VF TJ
Rectangular waveform
tp = 5 μs sine 19 Apk, TJ = 75 °C Range
VOLTAGE RATINGS
PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage
SYMBOL VR
VRWM
VALUES 19 15 700 0.32
-55 to +125
VS-19TQ015SPbF 15
UNITS A V A V °C
UNITS V
ABSO...
