VS-65PQ015PbF

www.vishay.com VS-65PQ015PbF, VS-65PQ015-N3 Vishay Semiconductors High Performance Schottky Rectifier, 65 A Base cathode 2 3 2 1 TO-247AC 1 Anode 3 Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-247AC 65 A 15 V 0.46 V 870 mA at 100 °C 125 °C Single die 9 mJ FEATURES 125 °C TJ operation (VR < 5 V) Single diode configuration Optimized for OR-ing applications Ultralow forward voltage drop Guard ring for enhanced ruggedness and long term reliability High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Available Designed and qualified according to JEDEC-JESD47 Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-65PQ015... Schottky rectifier module has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform tp = 5 μs sine 65 Apk, TJ = 125 °C Range VALUES 65 15 1500 0.46 - 55 to 125 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 100 °C TJ = 125 °C VS-65PQ01...