Power Transistors
2SC2590
Silicon NPN epitaxial planar type
For low-frequency power amplification
8.0+–00..15
Unit: m...
Power
Transistors
2SC2590
Silicon
NPN epitaxial planar type
For low-frequency power amplification
8.0+–00..15
Unit: mm
3.2±0.2
■ Features
φ 3.16±0.1
3.8±0.3 11.0±0.5
Excellent collector current IC characteristics of forward current
3.05±0.1
transfer ratio hFE
High transition frequency fT TO-126B package which requires no insulation plate for installa-
tion to the heat sink
1.9±0.1 16.0±1.0
/ ■ Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
120
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
120
V
le sta ntinu Emitter-base voltage (Collector open) VEBO
5
V
a e cyc isco Collector current
IC
0.5
A
life d, d Peak collector current
ICP
1.0
A
n u duct type Collector power dissipation
PC
1.2
W
te tin Pro ued Junction temperature
Tj
150
°C
four ontin Storage temperature
Tstg −55 to +150 °C
0.75±0.1
0.5±0.1
4.6±0.2 2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
in n s followliannged disc ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
120
V
tinue anc Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
M is con inten Forward current transfer ratio *1
hFE1 *2 VCE = 10 V, IC = 150 mA
90
220
/Dis ma hFE2 VCE = 5 V, IC = 500 mA
65 100
D ance type, Collector-emit...
