N-Channel MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
69mΩ @ VGS = 10V 100mΩ @ VGS = 4.5V
ID TA = +25°C
4.3A 3.5A
Description and Ap...
Description
Product Summary
BVDSS 60V
RDS(ON) Max
69mΩ @ VGS = 10V 100mΩ @ VGS = 4.5V
ID TA = +25°C
4.3A 3.5A
Description and Applications
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Motor controls Transformer driving switches DC-DC converters Power-management functions Uninterrupted power supplies
SOT223
DMN6069SE
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production Fast Switching Speed Low On-Resistance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ An automotive-compliant part is available under separate datasheet (DMN6069SEQ)
Mechanical Data
Package: SOT223 Package Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Copper Lead
Frame. Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate)
D
G
Top View
Pin Out - Top View
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMN6069SE-13
Package SOT223
Qty. 2,500
Packing Car...
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