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DMN6069SE

Diodes

N-Channel MOSFET

Product Summary BVDSS 60V RDS(ON) Max 69mΩ @ VGS = 10V 100mΩ @ VGS = 4.5V ID TA = +25°C 4.3A 3.5A Description and Ap...


Diodes

DMN6069SE

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Description
Product Summary BVDSS 60V RDS(ON) Max 69mΩ @ VGS = 10V 100mΩ @ VGS = 4.5V ID TA = +25°C 4.3A 3.5A Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.  Motor controls  Transformer driving switches  DC-DC converters  Power-management functions  Uninterrupted power supplies SOT223 DMN6069SE 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  Fast Switching Speed  Low On-Resistance  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/  An automotive-compliant part is available under separate datasheet (DMN6069SEQ) Mechanical Data  Package: SOT223  Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals Connections: See Diagram Below  Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208  Weight: 0.112 grams (Approximate) D G Top View Pin Out - Top View S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN6069SE-13 Package SOT223 Qty. 2,500 Packing Car...




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