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DMP1046UFDB Dataheets PDF



Part Number DMP1046UFDB
Manufacturers Diodes
Logo Diodes
Description Dual P-Channel MOSFET
Datasheet DMP1046UFDB DatasheetDMP1046UFDB Datasheet (PDF)

ADVANCED INFORMATION DMP1046UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS P-Channel -12V RDS(ON) max 61mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V ID MAX TA = +25°C -3.8A -3.3A -2.8A Features • Low On-Resistance • Low Input Capacitance • Low Profile, 0.6mm Max Height • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description This MOSFET is designed to minimize the on-state resistance (.

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ADVANCED INFORMATION DMP1046UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS P-Channel -12V RDS(ON) max 61mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V ID MAX TA = +25°C -3.8A -3.3A -2.8A Features • Low On-Resistance • Low Input Capacitance • Low Profile, 0.6mm Max Height • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications • Load Switch • Power Management Functions • Portable Power Adaptors Mechanical Data • Case: U-DFN2020-6 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 • Terminals Connections: See Diagram Below • Weight: 0.0065 grams (Approximate) U-DFN2020-6 D2 D2 G1 S1 Pin1 S2 G2 D1 D1 Bottom View D1 D2 G1 G2 S1 S2 Internal Schematic Ordering Information (Note 4) Notes: Part Number DMP1046UFDB -7 DMP1046UFDB -13 Case U-DFN2020-6 U-DFN2020-6 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information U-DFN2020-6 P6 YM P6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: C = 2015) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2015 C Jan Feb 12 2016 D Mar 3 2017 E Apr May 45 2018 F Jun Jul 67 2019 G Aug 8 Sep 9 2020 H Oct O 2021 I Nov Dec ND DMP1046UFDB Document number: DS37712 Rev. 2 - 2 1 of 6 www.diodes.com February 2015 © Diodes Incorporated ADVANCED INFORMATION DMP1046UFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 5) VGS = 4.5V Steady State t < 5s Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (L = 0.1mH) Avalanche Energy (L = 0.1mH) TA = +25°C TA = +70°C TA = +25°C TA = +70°C Symbol VDSS VGSS ID ID IS IDM IAS EAS Value -12 ±8 -3.8 -3.0 -5.0 -4.0 -1 -15 -12 8 Units V V A A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Steady State t < 5s Steady State t < 5s Notes: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. Symbol PD RθJA RθJC TJ, TSTG Value 1.4 2.2 92 55 20 -55 to 150 Units W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS (ON) Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. Min -12 - -0.4 - - - Typ - 37 47 63 -0.65 915 225 183 56.9 10.7 17.9 1.7 3.0 5.7 11.5 27.8 26.4 Max -1.0 ±100 -1 61 81 115 -1.2 - - Unit Test Condition V VGS = 0V, ID = -250µA µA VDS = -12V, VGS = 0V nA VGS = ±8V, VDS = 0V V VDS = VGS, ID = -250µA VGS = -4.5V, ID = -3.6A mΩ VGS = -2.5V, ID = -3.2A VGS = -1.8V, ID = -1.0A V VGS = 0V, IS = -4.5A pF pF VDS = -6V, VGS = 0V, f = 1.0MHz pF Ω VDS = 0V, VGS = 0V, f = 1MHz nC nC nC VDS = -6V, ID = -4.3A nC ns ns VDD = -6V, VGS = -4.5V, ns RL = 1.6Ω, RG = 1Ω ns DMP1046UFDB Document number: DS37712 Rev. 2 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated ID, DRAIN CURRENT (A) ADVANCED INFORMATION 10 9 8 7 6 5 4 3 2 1 0 0 0.1 0.09 0.08 VGS = 2.0V VGS = 1.8V VGS = 2.5V VGS = 3.0V VGS = 4.5V VGS = 8.0V VGS = 1.5V VGS = 1.2V 12 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 VGS = -1.8V 0.07 0.06 0.05 VGS = -2.5V 0.04 0.03 VGS = -4.5V 0.02 1 3.


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