Document
ADVANCED INFORMATION
DMP1046UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS P-Channel -12V
RDS(ON) max
61mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V
ID MAX TA = +25°C
-3.8A -3.3A -2.8A
Features
• Low On-Resistance • Low Input Capacitance • Low Profile, 0.6mm Max Height • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
• Load Switch • Power Management Functions • Portable Power Adaptors
Mechanical Data
• Case: U-DFN2020-6 • Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4 • Terminals Connections: See Diagram Below • Weight: 0.0065 grams (Approximate)
U-DFN2020-6
D2
D2 G1 S1
Pin1
S2 G2
D1
D1
Bottom View
D1 D2
G1 G2 S1 S2
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number DMP1046UFDB -7 DMP1046UFDB -13
Case U-DFN2020-6 U-DFN2020-6
Packaging 3,000/Tape & Reel 10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
U-DFN2020-6
P6 YM
P6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: C = 2015) M = Month (ex: 9 = September)
Date Code Key Year Code
Month Code
2015 C
Jan Feb 12
2016 D
Mar 3
2017 E
Apr May 45
2018 F
Jun Jul 67
2019 G
Aug 8
Sep 9
2020 H
Oct O
2021 I
Nov Dec ND
DMP1046UFDB
Document number: DS37712 Rev. 2 - 2
1 of 6 www.diodes.com
February 2015
© Diodes Incorporated
ADVANCED INFORMATION
DMP1046UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 4.5V
Steady State
t < 5s
Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (L = 0.1mH) Avalanche Energy (L = 0.1mH)
TA = +25°C TA = +70°C
TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
ID
IS IDM IAS EAS
Value -12 ±8
-3.8 -3.0
-5.0 -4.0
-1
-15 -12 8
Units V V
A
A
A A A mJ
Thermal Characteristics
Characteristic Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range
Steady State t < 5s
Steady State t < 5s
Notes: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
Symbol PD
RθJA RθJC TJ, TSTG
Value 1.4 2.2 92 55 20
-55 to 150
Units W
°C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage
Symbol
BVDSS IDSS IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VSD
Ciss Coss Crss Rg
Qg
Qgs Qgd tD(on)
tr tD(off)
tf
Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing.
Min
-12 -
-0.4 -
-
-
Typ
-
37 47 63 -0.65
915 225 183 56.9 10.7 17.9 1.7 3.0 5.7 11.5 27.8 26.4
Max
-1.0 ±100
-1 61 81 115 -1.2
-
-
Unit
Test Condition
V VGS = 0V, ID = -250µA µA VDS = -12V, VGS = 0V nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250µA VGS = -4.5V, ID = -3.6A
mΩ VGS = -2.5V, ID = -3.2A VGS = -1.8V, ID = -1.0A
V VGS = 0V, IS = -4.5A
pF
pF
VDS = -6V, VGS = 0V, f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz nC
nC nC VDS = -6V, ID = -4.3A
nC
ns
ns VDD = -6V, VGS = -4.5V, ns RL = 1.6Ω, RG = 1Ω
ns
DMP1046UFDB
Document number: DS37712 Rev. 2 - 2
2 of 6 www.diodes.com
February 2015
© Diodes Incorporated
ID, DRAIN CURRENT (A)
ADVANCED INFORMATION
10 9 8 7 6 5 4 3 2 1 0 0
0.1 0.09
0.08
VGS = 2.0V
VGS = 1.8V
VGS = 2.5V VGS = 3.0V
VGS = 4.5V VGS = 8.0V
VGS = 1.5V
VGS = 1.2V
12 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics
5
VGS = -1.8V
0.07 0.06 0.05
VGS = -2.5V
0.04 0.03
VGS = -4.5V
0.02 1
3.