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DMP1055UFDB Dataheets PDF



Part Number DMP1055UFDB
Manufacturers Diodes
Logo Diodes
Description Dual P-Channel MOSFET
Datasheet DMP1055UFDB DatasheetDMP1055UFDB Datasheet (PDF)

DMP1055UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -12V RDS(ON) max 59mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V ID MAX TA = +25°C -3.9A -3.3A -2.8A Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Load Switch  Power Management Functions  Portable Power Adaptors Features  Low On-Res.

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DMP1055UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -12V RDS(ON) max 59mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V ID MAX TA = +25°C -3.9A -3.3A -2.8A Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Load Switch  Power Management Functions  Portable Power Adaptors Features  Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Max Height  ESD protected gate.  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: U-DFN2020-6 Type B  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4  Terminals Connections: See Diagram Below  Weight: 0.0065 grams (approximate) ESD PROTECTED U-DFN2020-6 Type B D2 D2 G1 S1 Pin1 S2 G2 D1 D1 Bottom View D1 D2 G1 G2 Gate Protection Diode S1 Gate Protection Diode S2 Q1 P-CHANNEL Q2 P-CHANNEL Internal Schematic Ordering Information (Note 4) Notes: Part Number DMP1055UFDB -7 DMP1055UFDB -13 Case U-DFN2020-6 Type B U-DFN2020-6 Type B Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2012 Z Jan 1 Feb 2 DMP1055UFDB Document number: DS36934 Rev.1 - 2 D6 = Product Type Marking Code D6 YM YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) 2013 A Mar 3 2014 B Apr May 45 2015 C Jun Jul 67 1 of 6 www.diodes.com 2016 D Aug 8 Sep 9 2017 E Oct O 2018 F Nov Dec ND April 2014 © Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 5) VGS = -4.5V Steady State t < 5s Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, duty cycle = 1%) TA = +25°C TA = +70°C TA = +25°C TA = +70°C Symbol VDSS VGSS ID ID IS IDM DMP1055UFDB Value -12 ±8 -3.9 -3.1 -5.0 -4.0 -1.7 -25 Units V V A A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Steady State t < 5s Steady State t < 5s Symbol PD RθJA RθJC TJ, TSTG Value 1.36 1.89 92 66 18 -55 to +150 Units W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr Min -12 — — -0.4 — — — — — — — — — — — — — — — — — — — Typ — — — — 37 48 69 88 -0.7 1028 285 254 19.6 13 20.8 1.8 4.5 5.6 12.8 30.7 25.4 31.6 7.8 Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. Max — -1.0 ±10 -1 59 81 115 215 -1.2 — — — — — — — — — — — — — — Unit Test Condition V VGS = 0V, ID = -250μA μA VDS = -12V, VGS = 0V μA VGS = ±8V, VDS = 0V V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -3.6A mΩ VGS = -2.5V, ID = -3.1A VGS = -1.8V, ID = -2.6A VGS = -1.5V, ID = -0.5A V VGS = 0V, IS = -3.7A pF pF pF VDS = -6V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC nC nC VDS = -10V, ID = -4.7A nC ns ns VDD = -6V, VGS = -4.5V, ns RL = 1.6Ω, RG = 1Ω ns nS IS = -3.6A, dI/dt = 100A/μs nC IS = -3.6A, dI/dt = 100A/μs DMP1055UFDB Document number: DS36934 Rev.1 - 2 2 of 6 www.diodes.com April 2014 © Diodes Incorpor.


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