Document
ADVANANEDCWVEAIPNNRCFOEOD IRUNMCFATOTIROMNATION
DMP2007UFG
20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary
V(BR)DSS -20V
RDS(ON) max
5.5mΩ @ VGS = -10V 7.0mΩ @ VGS = -4.5V 9.0mΩ @ VGS = -2.5V
ID max TC = +25°C
-40A -40A -40A
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Load Switch Power Management Functions
Features
Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher
density end products Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate)
POWERDI3333-8
S Pin 1 S S
G
Top View
D D D D
Bottom View
D
G S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMP2007UFG-7 DMP2007UFG-13
Case POWERDI3333-8 POWERDI3333-8
Packaging 2000/Tape & Reel 3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
S43
POWERDI is a registered trademark of Diodes Incorporated
DMP2007UFG
Document number: DS37943 Rev. 2 - 2
S43 = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 ~ 53)
1 of 7 www.diodes.com
April 2015
© Diodes Incorporated
ADVANANEDCWVEAIPNNRCFOEOD IRUNMCFATOTIROMNATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Steady State
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 5) Avalanche Current L=0.1mH Avalanche Energy L=0.1mH
TA = +25°C TA = +70°C TC = +25°C
Symbol VDSS VGSS
ID
IDM IS IAS EAS
DMP2007UFG
Value -20 ±12
-18.0 -14.5 -40
-80 -2.2 -30 50
Units V V
A
A A A mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case Operating and Storage Temperature Range
TA = +25°C
TC = +25°C (Note 5) (Note 6)
Symbol PD
RθJA RθJC TJ, TSTG
Value 2.3 41 58 143 3.0
-55 to +150
Units W
°C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge
Symbol
BVDSS IDSS IGSS
VGS(TH)
RDS(ON)
VSD
Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON)
tR tD(OFF)
tF tRR Qrr
Min
-20 — —
-0.4 — — — —
— — — — — — — — — — — — — —
Typ
— — —
— 4.4 4.9 6.5 -0.7
4621 652 403 3.2 39 85 8.3 9.6 10.1 9.8 61 51 20.1 10.1
Max
— -1 ±100
-1.3 5.5 7.0 9.0 -1.2
— — — — — — — — — — — — — —
Unit
Test Condition
V VGS = 0V, ID = -250µA µA VDS = -16V, VGS = 0V nA VGS = 12V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -10V, ID = -15A mΩ VGS = -4.5V, ID = -15A
VGS = -2.5V, ID = -10A V VGS = 0V, IS = -10A
pF
VDS = -10V, VGS = 0V f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDD = -10V, ID = -20A
ns
VGS = -4.5V, VDD = -10V, RG = 1Ω, ID = -10A
ns IF = -10A, di/dt = 100A/µs nC IF = -10A, di/dt = 100A/µs
Notes:
5. RθJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to pr.