DatasheetsPDF.com

DMP2007UFG Dataheets PDF



Part Number DMP2007UFG
Manufacturers Diodes
Logo Diodes
Description P-Channel MOSFET
Datasheet DMP2007UFG DatasheetDMP2007UFG Datasheet (PDF)

ADVANANEDCWVEAIPNNRCFOEOD IRUNMCFATOTIROMNATION DMP2007UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS -20V RDS(ON) max 5.5mΩ @ VGS = -10V 7.0mΩ @ VGS = -4.5V 9.0mΩ @ VGS = -2.5V ID max TC = +25°C -40A -40A -40A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Load Switch  Power Management Fun.

  DMP2007UFG   DMP2007UFG


Document
ADVANANEDCWVEAIPNNRCFOEOD IRUNMCFATOTIROMNATION DMP2007UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS -20V RDS(ON) max 5.5mΩ @ VGS = -10V 7.0mΩ @ VGS = -4.5V 9.0mΩ @ VGS = -2.5V ID max TC = +25°C -40A -40A -40A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Load Switch  Power Management Functions Features  Low RDS(ON) – ensures on state losses are minimized  Small form factor thermally efficient package enables higher density end products  Occupies just 33% of the board area occupied by SO-8 enabling smaller end product  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: POWERDI3333-8  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.008 grams (Approximate) POWERDI3333-8 S Pin 1 S S G Top View D D D D Bottom View D G S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMP2007UFG-7 DMP2007UFG-13 Case POWERDI3333-8 POWERDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW S43 POWERDI is a registered trademark of Diodes Incorporated DMP2007UFG Document number: DS37943 Rev. 2 - 2 S43 = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 ~ 53) 1 of 7 www.diodes.com April 2015 © Diodes Incorporated ADVANANEDCWVEAIPNNRCFOEOD IRUNMCFATOTIROMNATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 5) VGS = -4.5V Steady State Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 5) Avalanche Current L=0.1mH Avalanche Energy L=0.1mH TA = +25°C TA = +70°C TC = +25°C Symbol VDSS VGSS ID IDM IS IAS EAS DMP2007UFG Value -20 ±12 -18.0 -14.5 -40 -80 -2.2 -30 50 Units V V A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Total Power Dissipation (Note 5) Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range TA = +25°C TC = +25°C (Note 5) (Note 6) Symbol PD RθJA RθJC TJ, TSTG Value 2.3 41 58 143 3.0 -55 to +150 Units W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS IDSS IGSS VGS(TH) RDS(ON) VSD Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR Qrr Min -20 — — -0.4 — — — — — — — — — — — — — — — — — — Typ — — — — 4.4 4.9 6.5 -0.7 4621 652 403 3.2 39 85 8.3 9.6 10.1 9.8 61 51 20.1 10.1 Max — -1 ±100 -1.3 5.5 7.0 9.0 -1.2 — — — — — — — — — — — — — — Unit Test Condition V VGS = 0V, ID = -250µA µA VDS = -16V, VGS = 0V nA VGS = 12V, VDS = 0V V VDS = VGS, ID = -250µA VGS = -10V, ID = -15A mΩ VGS = -4.5V, ID = -15A VGS = -2.5V, ID = -10A V VGS = 0V, IS = -10A pF VDS = -10V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = -10V, ID = -20A ns VGS = -4.5V, VDD = -10V, RG = 1Ω, ID = -10A ns IF = -10A, di/dt = 100A/µs nC IF = -10A, di/dt = 100A/µs Notes: 5. RθJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to pr.


DMP2006UFG DMP2007UFG DMP2021UFDF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)