HFS13N60U

HFS13N60U HFS13N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 60.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.33 ȍ7\S #9GS=10V ‰ 100% Avalanche Tested Sep 2012 BVDSS = 600 V RDS(on) typ = 0.33 ȍ ID = 14.0 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 14.0 * 8.8 * 56.0 * ρ30 810 14.0 5.4 4.5 PD TJ, TSTG TL Power Dissipation (TC = 25୅) - Derate above 25୅ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 54 0.43 -55 to +150 300 * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RșJC RșJA Parameter Junction-to-Case Junction-to-Ambient Typ. --- Max. 2.3 62.5 Units V A A A V mJ A mJ V/ns W W/୅ ୅ ୅ Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝΄ΖΡ͑ͣͣ͑͢͡ HFS13N60U Package Marking and Odering Information Device Marking HFS13N60U HFS13N60U Week Marking YWWX...