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HFW10N60S
N-Channel MOSFET
Description
HFW10N60S May 2010 HFW10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 9.5 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(...
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