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HFW12N60S

N-Channel MOSFET

Description

HFW12N60S Jan 2013 HFW12N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.53 ȍ ID = 12 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area Lower RDS(O...

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