N-Channel MOSFET
HFW6N90_HFI6N90
March 2013
HFW6N90 / HFI6N90
900V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalan...
Description
HFW6N90_HFI6N90
March 2013
HFW6N90 / HFI6N90
900V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.95 ȍ7\S#9GS=10V 100% Avalanche Tested
BVDSS = 900 V RDS(on) typ = 1.95 ȍ ID = 6.0 A
D2-PAK I2-PAK
HFW6N90
HFI6N90
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
900 6.0 3.8 24 ρ30 650 6.0 16.7 4.5
PD
TJ, TSTG TL
Power Dissipation (TA = 25ଇ) * Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
3.13 167 1.33 -55 to +150
300
Units V A A A V mJ A mJ
V/ns W W W/ఁ͑ ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol RșJC RșJA
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 0.75 40 62.5
Unit...
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