N-Channel MOSFET
HFW8N65U_HFI8N65U
HFW8N65U / HFI8N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugg...
Description
HFW8N65U_HFI8N65U
HFW8N65U / HFI8N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
Jan 2013
BVDSS = 650 V RDS(on) typ ȍ ID = 7.5 A
D2-PAK I2-PAK
HFW8N65U HFI8N65U 1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650 7.5 4.7 30 ρ30 280 7.5 15.0 4.5
Power Dissipation (TA = 25) *
PD Power Dissipation (TC = 25) - Derate above 25
3.13
150 1.2
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Units V A A A V mJ A mJ
V/ns W W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
Junction-to-Case
RșJA Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 0.82 40 62.5
Units /W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣ...
Similar Datasheet