HRA56N08K

HRA56N08K HRA56N08K 80V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 110nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.5 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 80 V RDS(on) typ = 4.5mΩ ID = 110 A TO-247 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25℃) - Derate above 25℃ 80 110 77 370 ±25 745 13.6 136 0.9 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 300 Units V A A A V mJ mJ W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient Typ. --- Max. 1.1 40 Units ℃/W ◎ SEMIHOW REV.A0,December 2014 HRA56N08K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold Voltage Static Drain-Source RDS(ON) On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 40 A 2.2 -- gFS Forward Transconductance Off Characteristi...