N-Channel MOSFET
HRA82N10K
HRA82N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technolo...
Description
HRA82N10K
HRA82N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 110nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.5 mΩ (Typ.) @VGS=10V 100% Avalanche Tested
December 2014
BVDSS = 100 V RDS(on) typ = 6.5mΩ ID = 100 A
TO-247
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25℃) - Derate above 25℃
100 100 70 350 ±25 560 16.7 167 1.11
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +175 300
Units V A A A V mJ mJ W
W/℃ ℃
℃
Thermal Resistance Characteristics
Symbol RθJC RθJA
Parameter Junction-to-Case Junction-to-Ambient
Typ. ---
Max. 0.9 40
Units ℃/W
◎ SEMIHOW REV.A0,December 2014
HRA82N10K
Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 30 A
2.2 --
gFS Forward Transconductance
Off Character...
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