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HRD120N10K

N-Channel MOSFET

Description

HRD120N10K_HRU120N10K HRD120N10K / HRU120N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 65 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) ...

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